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Cold tests of irradiated FE-I4 at CERN

Cold tests of irradiated FE-I4 at CERN. M. Menouni , A.Rozanov (CPPM - d'Aix-Marseille Université). Outlook. The test set-up and the test conditions Default configuration parameters Digital tests Noise Occupancy tests and Low temperature effects

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Cold tests of irradiated FE-I4 at CERN

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  1. Cold tests of irradiated FE-I4 at CERN M. Menouni, A.Rozanov (CPPM - d'Aix-Marseille Université)

  2. Outlook • The test set-up and the test conditions • Default configuration parameters • Digital tests • Noise Occupancy tests and Low temperature effects • Effects of PrmpVbp and Amp2VbpFol on the Noise at low temperature • Effect of the tuning at low temperature • Conclusion Cold tests of irradiated FE-I4

  3. Test Set up • Single board FE-I4-B number 165 irradiated in 2012 at CERN PS with 24 GeV protons close to the region of end of columns at 400 MRad • USBpix board with gray flat cable to single chip board • Typical consumption at ambient temperature is : • Vdda=2.5v Idda=430 mA • Vddd=2.5v Iddd=181 mA • Temperature regulated inside the freezer FARK 3130A with dry air flow • Noise measured with NoiseOcc scan usually with 10**5 pixel headers. Cold tests of irradiated FE-I4

  4. Default configuration • Chip configuration: • The threshold is set to 3000e at ambient temperature • FEI4b.irradiated.chip.165.tuned.3000e.TOT8.cfg.root from 17.04.2013 • in fact the configuration file corresponds to a non-tuned chip • Threshold Scan gives : • Mean=3030 • Sigma=381 • Noise= 105 +/- 15 Cold tests of irradiated FE-I4

  5. Digital Tests • Digital_Test good for nominal configuration parameters: Amp2Vbpf=100 • Very High noise at small value of Amp2Vbpf=5 • block the discriminator, so the 400 MRad beam spot is clearly seen. Amp2Vbpf = 100 Amp2Vbpf = 5 Cold tests of irradiated FE-I4

  6. Noise Occupancy tests • Noise Occupancy scan is compatible with the Digital Test • For nominal value of Amp2Vbpf (100) ~No noise at room temperature • For low value of Amp2Vbpf (=5) • Strong Noise at room temperature • correlated with Beam Spot • In this test 64501 hits/10**5 headers Amp2Vbpf = 100 Amp2Vbpf = 10 Cold tests of irradiated FE-I4

  7. Noise Occupancy tests at T=-22 C • At -22 C and for nominal configuration Amp2Vbpf (=100) • the Noise Occupancy is higher than the noise at room temperature • The level of noise is still acceptable • For low value of Amp2Vbpf (5) • High level of noise • correlated with Beam Spot • In this test 43764 hits/10**5 headers Amp2Vbpf = 100 Amp2Vbpf = 5 Cold tests of irradiated FE-I4

  8. Effect of low temperature • Nominal Configuration: • PrmpVbp = 43 • Amp2VbpFol = 26 • Noise increases for low temperature • For nominal value of Amp2Vbpf=100 : • Noise starts to increase at T~-10 C • At T=-23 C Typical 3000 hits/10**5 headers • The noise still present even for Amp2Vbpf = 255 Cold tests of irradiated FE-I4

  9. Effect of PrmpVbp at low temperature • Nominal Configuration: • PrmpVbp = 43 • Amp2VbpFol = 26 • PrmpVbp is the bias of the peampstage • Increasing PrmpVbp from 43 to 96 does not help to reduce the noise • Increase the consumption of the Preamp stage • Vdda current consumption increases from 430 mA (nominal) to 640 mA • 30% increase of power Cold tests of irradiated FE-I4

  10. Effect of Amp2VbpFol at low temperature • Amp2VbpFol is the bias of the Amp2 follower stage • Decreasing Amp2VbpFol from 26 to 1 reduces the noise • but the noise level remains high even for the highest value of Amp2Vbpf (255) Cold tests of irradiated FE-I4

  11. Low temperature effect for Tuned chip (*) The threshold tuned with the nominal configuration where the Amp2Vbpf=100 The threshold depends on the Amp2Vbpf We have to tune the chip for each Amp2Vbpf value changing ! Cold tests of irradiated FE-I4

  12. Low temperature effect for Tuned chip • Test is done with Nominal Configuration: • PrmpVbp = 43 and Amp2VbpFol = 26 • At low temperature of -26 °C, the threshold is tuned to 3000 e- for the whole array of the irradiated chip • The noise occupancy is reduced drastically compared to the one for the un-tuned case at low temperature Cold tests of irradiated FE-I4

  13. Conclusion • Noise occupancy tests are carried out on the FE-I4 chip 265 irradiated with 24 GeV proton to 400 Mrad • Below T=-10 °C, noise increase at nominal setting in few pixels • Partly correlated with irradiated region of the chip • At low values of Amp2Vbpf linear increase of the noise when lowering the temperature • At low temperature, Increasing the PrmpVbp to 96 or decreasing Amp2VbpFol from 26 to 1 help to reduce the noise • However, the noise level remains high even for the highest value of Amp2Vbpf (255) • Despite this level of noise, the threshold was tuned at 3000 e- for the whole pixel array at low temperature • The noise occupancy is reduced drastically compared to the one for the un-tuned case at low temperature • More details in E-log: https://atlpix01.cern.ch/elog/FE-I4_SEU_measurements/302 Cold tests of irradiated FE-I4

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