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NSTI Nano-Technology Project At IIT Kanpur Focused Ion Beam Part of The Project

NSTI Nano-Technology Project At IIT Kanpur Focused Ion Beam Part of The Project. Objectives.

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NSTI Nano-Technology Project At IIT Kanpur Focused Ion Beam Part of The Project

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  1. NSTI Nano-Technology Project At IIT Kanpur Focused Ion Beam Part of The Project

  2. Objectives To develop a novel, compact microwave driven plasma ion source for focused ion beam systems as a part of NSTI program. The development of this technology will open up several new applications in the field of nanoscale science and engineering, MEMS, NEMS etc. To utilize the recent developments in the application of high frequency waves in the microwave regime for efficient and intense plasma generation to development of a complete FIB system. This would be a first time development in the field. It is expected that pulsing the plasma with high power waves would give rise to higher current densities which would provide adequate brightness required for such applications The tool will be used to produce templates, functinalized surfaces, stamps needed for patterining, printing requirements of the substrate material to form either trench or protusion patterns or nano-sized 3D structures suchas nanopillars, nanogaps, nanobridges and nanopores as part of the NST program.

  3. FIB Implementation • To produce micro/nanosize dies • To produce micro/nano size patterns for devices.

  4. Focused Ion Beam System at IIT Kanpur

  5. A micron size die in Si for making micro/nano size objects having desired shape or for imprinting

  6. A nano size pencil carved from W wire of 30 micron dia. A multiple (100-1000 ) structure of such wires can be carved at the end of the 30 microm thick wire for Writing or printing on nano scale on soft materials

  7. Nano Electrode Fabrication Using Focused Ion Beam Suitable For OrganicDevices * • Portion Of the interdigitated nano electrodes designed and fabricated by FIB. A minimum separation of 16 nm between the electrodes has been achieved. *Zainul ( M.Tech. thesis IITK )

  8. A typical plot of I-V characteristics of an Alq3 device with an electrode separation of 16 nm. The fitting parameters are also indicated in a table as inset in the figure. Note that the power of V is 2.3. For a single carrier device operating in the space charge limited current regime it is expected to be 2 when the mobility is field independent.

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