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External Modulation OEIC Wavelength Converters

Pursuing innovative designs for wavelength converters with enhanced speed and monitoring. Utilizing external modulators and OEIC technology to achieve high performance. Initial success with 1st generation OEIC-WC mask fabrication. Addressing drive voltage and bandwidth challenges. Future work includes exploring Mach-Zehnder-based solutions for improved power handling, chirp tailoring, and low drive voltage.

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External Modulation OEIC Wavelength Converters

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  1. External Modulation OEIC Wavelength Converters Task Area: [3] Jon Barton, Matt Sysak, Jeff Henness, John Hutchinson (Intel), Larry Coldren, Dan Blumenthal University of California Santa Barbara, CA 93106 Tel: (805) 893-8465; Email:jsbarton@engineering.ucsb.edu

  2. Outline Objective/Scope: To pursue alternative wavelength converter designs to achieve higher speed, chirp tailoring and wavelength monitoring capabilities Approach: Integrated external modulators Major Accomplishments: 1st Generation OEIC-WC mask fabricated – using laser-EA modulator devices currently in process Issues: Drive voltage - MQW design Bandwidth – traveling wave to reach > 10 GHz

  3. Wavelength Converter Designs Direct Modulated SGDBR Integrated External Modulator SGDBR SGDBR Post Amp SOA Front Mirror Gain Phase Back Mirror EAM Front Mirror Gain Phase Back Mirror Preamplifier SOA Photodetector Preamplifier SOA Photodetector

  4. External modulators for OEICs WC • Electro-Absorption (EA) Modulators (Franz-Keldysh and MQW types with lumped and Traveling wave electrodes) • Tandem EA modulators for chirp compensation • Mach-Zehnder modulators for high speed, low drive voltage, low photocurrent generation and chirp tailorability EA - + EA

  5. -Vb R Vm Pindet Pout Mod Detector Pinmod OEIC-MOD Equivalent Circuit & Operation Detector • For EAM, Pindet >>Pinmod to avoid saturation (or kill DC photocurrent in EAM) • For MZ reduced photocurrent issue • (permits higher laser power – modulator gain) Mod. • Combined EAM-detector and EAM shown by Hsu-feng Chou

  6. Reduction in Photocurrent Study Goal: Reduce effective carrier lifetime significantly below the device transit time. Propose use of thermally stable Ion Implantation to produce regions of high resistivity through introduction of mid-gap energy levels. EA Modulator h+ p - InP hv implant n - InP e-

  7. OEIC-Mod ac Equivalent Circuit CEAM  0.3pF CPhotoDetector  0.2pF 50Ω • Best case lumped element devices limited to approximately 6 GHz • Model verified using P-Spice Equivalent Circuit Model for OEIC

  8. Lumped EAM modulator performance • Typical bandwidth measurement for a lumped 250m long device

  9. G S G CPW feedline n-contact Au PMGI bridge P-contact PMGI Waveguide N-contact p-contact n-contact G S G Traveling-wave EAM Initial work funded by RFLICS

  10. -25 Dot curve : experiment (35 Ohm) -30 open -35 50 ohm Relative EO- frequency response -40 35 ohm -45 -50 Frequency (GHz) 0 10 20 30 40 50 Traveling-wave rf response The bandwidth : > 30GHz -3dB 50 termination : -6 dB drop @ 40GHz from D.C. Velocity mismatch & microwave loss : -2.0dB Initial work funded by RFLICS

  11. 80 70 60 50 EAM photocurrent (mA) 40 30 20 10 0 0 5 10 15 Input optical power (au) Waveguide Photodetector Performance • Franz-Keldysh waveguide detectors • Very linear response • High saturation current • OEIC detector requires 30 - 50 mW input power (to get 36 - 60 mA of current) to drive modulator or gain section Mod SOA

  12. First Generation OEIC-EAM Devices EAM Pre Amp SOA Pre Amp SOA Photodetector Photodetector Pre Amp SOA • First Generation Devices Designed and in Process

  13. Alternative OEIC Solutions Integrated Mach Zehnder SGDBR MZ Modulator Front Mirror Gain Phase Back Mirror Preamplifier SOA Photodetector

  14. Mach-Zehnder Based Devices • Mach Zehnder Device Based Wavelength Converters • Better Power handling capability than EA Modulators – low photocurrent generation • Chirp tailorability – increased reach • Low Drive Voltage Vp < 3V • High Bandwidth > 10 GHz • Wide Tuning Range

  15. Integrated MZ Layout • Lumped electrode Mach-Zehnder SGDBR SOA Mach-Zehnder 10 µm 1x2 MMI splitter 2x2 combiner Phase shifter Tunable MMI Lumped MZ Pads

  16. Integrated Mach-Zehnder Results Initial work funded by RFLICS

  17. 1.4 c = B p - L (n ( electrical ) n ( optical )) group group Traveling-Wave Mach-Zehnder • Distributed contacts Initial work funded by RFLICS

  18. Summary/Future Work • Preliminary Circuit Modeling completed for devices • Design completed and Processing started on 1st Generation OEIC using tandem external EA-modulators • Consideration of Mach-Zehnder based OE Wavelength converters and traveling-wave devices

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