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CMOS fabrication process overview

CMOS fabrication process overview. 8-2. P-well on N-substrate. . . . . . . . . Steps : N-type substrateOxidation, and mask (MASK 1) to create P-well (4-5?m deep) P-well doping P-well acts as substrate for nMOS devices. The two areas are electrically isolated using thick field oxide (and often isolation implants [not shown here]).

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CMOS fabrication process overview

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    1. CMOS fabrication process overview 8-1

    2. CMOS fabrication process overview 8-2 P-well on N-substrate

    3. CMOS fabrication process overview 8-3 Polysilicon Gate Formation

    4. CMOS fabrication process overview 8-4 nMOS P+ Source/Drain difusion – self-aligned to Poly gate

    5. CMOS fabrication process overview 8-5 pMOS N+ Source/Drain difusion – self-aligned to Poly gate

    6. CMOS fabrication process overview 8-6 pMOS N+ Source/Drain difusion, contact holes & metallisation

    7. CMOS fabrication process overview 8-7 CMOS N-well process

    8. CMOS fabrication process overview 8-8

    9. CMOS fabrication process overview 8-9

    10. CMOS fabrication process overview 8-10

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