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3-6 September 2002 Antwerp Hilton, Belgium

3-6 September 2002 Antwerp Hilton, Belgium. Outline. Wednesday Sept 4 th , 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday Sept 5 th , 2002 Resists I Metrology Friday Sept 6 th ,2002 Masks Resists II

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3-6 September 2002 Antwerp Hilton, Belgium

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  1. 3-6 September 2002 Antwerp Hilton, Belgium

  2. Outline • Wednesday Sept 4th, 2002 • Introduction • Exposure tools/Immersion lithography • Materials • Lasers • Thursday Sept 5th, 2002 • Resists I • Metrology • Friday Sept 6th,2002 • Masks • Resists II • General / closure

  3. Exposure tools andimmersion lithography Session chairs : G. Fueller, A. Suzuki, R. Garreis • 08:40 Nikon F2 Exposure Tool • Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido • Nikon Corporation • 09:00 Development of 157nm Exposure Tools • Hideo Hata • Canon Inc., Semiconductor Equipment Development Center • 09:20 157nm Exposure Tool • Hans Jasper1,Herman Boom1, Tammo Uitterdijk1, Theo Modderman1, Jan Mulkens1, Judon Stoeldraijer1, Martin Brunotte2, Birgit Mecking2, Nils Dieckmann2 • 1ASML Veldhoven, 2Carl Zeiss • 09:40 Update on MSVII Lithographic System • J. McClay, B. Tirri, H. Sewell, T. Fahey • ASML Wilton

  4. Exposure tools and immersion lithography Session chairs : G. Fueller, A. Suzuki, R. Garreis • 10:30 Drivers, Prospects and Challenges for Immersion Lithography (INVITED) • Burn J. Lin • TSMC • 10:50 Immersion Lithography: Optics for the 50nm Node • M. Switkes, M. Rothschild • MIT Lincoln Laboratory • 11:10 157nm Objective Improvements, Wavefront Measurements and Modeling Predictions • James Webb, Steve Mack, Tim Rich, Horst Schreiber • Corning Tropel Corporation • 11:30 High Numerical Aperture Lens for 157nm Lithography • Toshifumi Suganaga1, Noriyoshi Kanda1, Jae-Hwan Kim1, Osamu Yamabe1, Kunio Watanabe1, Takamitsu Furukawa1, Seiro Miyoshi1, Toshiro Itani1, Julian Cashmore2, Malcolm Gower2 • 1Selete, 2Exitech Ltd.

  5. Materials Session chairs : R. Sparrow, S. Kikugawa, E. Moersen • 13:30 Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools • G. Grabosch, K. Knapp, L. Parthier, E. Mörsen • Schott Lithotec AG • 13:50 Progress in the Development of CaF2 Materials for 157nm Lithography • Applications • Bill Rosch, Michael Genier • Corning Inc. • 14:10 Crystal Growth of CaF2 – Focus on Yield Enhancement • N. Senguttuvan1, K. Sumiya1, K. Susa1, M. Ishii 2 • 1Research & Development Center, Hitachi Chemical Co., Ltd., 2 Shonan Institute of Technology • 14:30 CaF2 Ramp Challenges for 157nm Lithography • Janice M. Golda • Intel Corporation • 14:50 Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm • John H. Burnett1, Zachary H. Levine1, Eric L. Shirley1, Robert Sparrow2 • 1National Institute of Standards and Technology, 2Corning Inc.

  6. Materials Session chairs : R. Sparrow, S. Kikugawa, E. Moersen • 15:10 Modified Fused Silica Glass “AQF” for 157 nm Lithography • Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga • Asahi Glass Co. Ltd. • 16:00 Refractory Oxide Contamination of Optical Surfaces at 157 nm • T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild • MIT Lincoln Laboratory • 16:20 Long-Term Durability of Optical Coatings • V. Liberman1, M. Rothschld1, N.N. Efremow1, S.T. Palmacci1, J.H.C. Sedlacek1, A. Grenville2 • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH • 16:40 Accelerated Damage to CaF2 and MgF2 Surfaces • V. Liberman1, M. Rothschld1, N.N. Efremow1, A. Grenville2 • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH

  7. Lasers Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel • 17:00 High Power, High Repetition Rate F2-Laser for 157 nm Lithography • S. Spratte1, F. Voss1, I. Bragin1, E. Bergmann1, N. Niemöller1, T. Nagy1, U. Rebhan1, K. Vogler1, I. Klaft1, R. Pätzel1, G. Govorkov2, G. Hua2 • 1Lambda Physik AG, 2Lambda Physik Inc. • 17:20 F2 MOPA. Some Aspects of Spectral Purity • German Rylov • Cymer Inc. • 17:40 Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser • Ryoichi Nohdomi3, Tatsuya Ariga3, Hidenori Watanabe3, Takahito Kumazaki3, Kazuaki Hotta4, Hakaru Mizoguchi3, Akihiko Takahashi1, Tatsuo Okada2 • 1Kyushu University School of Health Sciences, 2Kyushu University, 3Gigaphoton Inc.,4Ushio Inc.

  8. Resists I Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel • 08:30 Recent Advancements in 157nm Resist Performance • Karen Turnquest1, V. Graffenberg2, S. Patel2, D. Miller2, K. Dean2, A.-M. Goethals3, F. Van Roey3, Jan Hermans3, K. Ronse3, P. Wong4, S. Hansen4 • 1AMD Assignee to International SEMATECH, 2International SEMATECH,3IMEC, 4ASML Veldhoven • 08:50 Performances of Fluoropolymer Resists for 157-nm Lithography • Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani • Selete • 09:10 Intel 157 nm Resist Benchmarking • Jeanette Roberts1, Paul Zimmerman2, Robert Meagley1, Jim Powers1 • 1Intel Corporation, 2Intel Assignee to International SEMATECH

  9. Resists I Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel • 09:30 Advances in Fluorinated Polymers for 157nm Lithography • Will Conley1, Paul Zimmerman1, Daniel Miller1, Brian Trinque2, H.V. Tran1, Brian Osborn2, Charles Chambers2, Yu-Tsai Hsieh2, Schuyler Corry2, Takashi Chiba2, C. Grant Willson2 • 1International SEMATECH, 2Department of Chemistry & Chemical Engineering, University of Texas at Austin • 09:50 Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties • M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg • DuPont • 10:10 Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report • Charles Chambers1, Will Conley2, Daniel Miller3, Brian Osborn1, Hoang V. Tran1, Brian Trinque1, Matthew Pinnow1, Takashi Chiba1, Paul Zimmerman4, C. Grant Willson3 • 1Departments of Chemistry and Chemical Engineering, University of Texas, 2Motorola assignee to International SEMATECH, 3International SEMATECH, 4Intel assignee to International SEMATECH

  10. Metrology Session chairs : J. Burnett, Y. Watakabe, W. Harnisch • 11:00 Angle Resolved Scattering Measurements at 157nm • T.M. Bloomstein, D.E. Hardy, M. Rothschild • MIT Lincoln Laboratory • 11:20 VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography • 1N.V. Edwards, 1S. Zollner, 1J. Kulik, 1Q. Xie, 1M. Erickson, 1X.-D. Wang, 1D. Roan,2T.E. Tiwald • 1Motorola APDER; 2J.A. Woollam Co. • 11:40 Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography • Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle • SOPRA

  11. Metrology Session chairs : J. Burnett, Y. Watakabe, W. Harnisch • 12:00 Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths • B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell • Hinds Instruments, Inc. • 12.20 High Brightness F2* (157nm) and ArF* (193nm) Lamps • Manfred Salvermoser, D.E. Murnick • Rutgers University, Dept. of Physics

  12. Masks Session chairs : C. Progler, N. Hayashi, C. Schilz • 08:30 Electron Beam Induced Processes and their Applicability to Mask Repair • Johannes Bihr2, Volker Boegli1, Jens Greiser2, Hans W.P. Koops1 • 1NaWoTec GmbH, 2LEO Elektronenmikroskopie GmbH • 08:50 Development of Bilayered TaSiOx Embedded Attenuating PSM • Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi • Dai Nippon Printing Co. Ltd. • 09:10 157nm Attenuated PSM Films by Ion Beam Sputter Deposition • Matthew Lassiter, Michael Cangemi, Darren Taylor • Photronics Inc.

  13. Masks Session chairs : C. Progler, N. Hayashi, C. Schilz • 09:30 Implementation Challenges of Fused Silica Pellicles for 157-nm Lithography • Andrew Grenville1, Emily Fisch2, Ivan Lalovic3, Emily Shu4, Kyle Spurlock5, Chris Van Peski6, Eric Cotte7, Phillip Reu7, Roxann Engelstad7, Edward Lovell7 • 1International SEMATECH/Intel Corporation, 2IBM Microelectronics, 3Advanced Micro Devices, 4Intel Corporation, 5International SEMATECH/ Advanced Micro Devices, 6International SEMATECH, 7University of Wisconsin • 09:50 Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles • Jim Wiley • KLA Tencor Corporation • 10:10 Fused Silica Pellicle Mounting Issues • Chris Van Peski1, Andrew Grenville2, Emily Shu3 • 1International SEMATECH , 2 International SEMATECH/Intel Corporation, 3Intel Corporation • 10:30 Improvement of the Membrane Durability of Polymeric Pellicles • Ikuo Matsukura • ASAHI Glass Co. Ltd.

  14. Resists II Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel • 11:20 Resist Contamination Issues at 157nm • Kim Dean1, David Stark1, Jeff Meute2, Karen Turnquest3 • 1International SEMATECH, 2IBM Assignee to International SEMATECH, 3AMD Assignee to International SEMATECH • 11:40 Evolution of Low Absorbance 157nm Fluoresists • Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard • Shipley Co. • 12:00 Development ofSilsesquioxane Based 157nm Photoresist: an Update • Raymond J. Hung1, Mikio Yamachika1, Takashi Chiba2, Haruo Iwasawa2, Akihiro Hayashi2, Noboru Yamahara2, Tsutomu Shimokawa2 • 1JSR Microelectronics Inc, 2JSR Corporation

  15. Resists II Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel • 12:20 Platform Considerations for 157 nm Photoresists • Ralph R. Dammel1, Francis Houlihan1, Raj Sakamuri1, Sang-Ho Lee1, M. Dalil Rahman1, Takanori Kudo1, Andrew Romano1, Larry Rhodes2, Chun Chang2, John Lipian2, Cheryl Burns2, Dennis A. Barnes2, Will Conley3, Daniel Miller3 • 1AZ Electronic Materials,Clariant Corporation, 2Promerus LLC, 3International SEMATECH • 12:40 Pragmatic Approaches to 157nm Resist Design • Sanjay Malik1, Stephanie Dilocker1, Tadayoshi Kokubo2 • 1Arch Chemicals, Inc., 2FUJIFILM ARCH Co. Ltd

  16. General / Closure • 14:30 An Analysis of 157nm Technology Cost of Ownership • Walt Trybula and Phil Seidel • International SEMATECH • 14:50 Closing Remarks • Luc Van den hove • IMEC

  17. Poster Session: Metrology • Line-Edge Roughness Calculation of Photoresists Using Off-LineAnalysis of Top-Down SEM Images • G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, V. Constantoudis1, and E Gogolides1 • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC • Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis? • V. Constantoudis1, G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, and E Gogolides1 • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC

  18. Poster Session: Masks • Molecular Contamination in 157 nm Lithography:Feasibility of Reticle Cleaning • Anton Duisterwinkel1, Willem van Schaik2 • 1TNO TPD Center for Contamination Control, 2ASML, Veldhoven • Development of Hard Pellicle for 157 nm lithography • K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga • ASAHI Glass Co. Ltd. • Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles • Roger H. French1, Robert C. Wheland1, M. F. Lemon1,Edward Zhang2,Joseph Gordon2 • 1DuPont Co. Central Research, 2DuPont Photomasks Inc. • Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength • L.A. Wang, H. C. Chen • Institute of Electro-Optical Engineeing, National Taiwan University

  19. Poster Session: Lasers • A Novel Large Area 172nm Xe2* VUV Excimer Lamp • Manfred Salvermoser, D.E. Murnick • Rutgers University, Dept. of Physics • Compact Excimer Lasers at 157 nm for Metrology and Inspection • A. Görtler, C. Strowitzki • TuiLaser AG

  20. Poster Session: Materials • The Small Optical Anisotropy in CaF2: on the Connection to Exciton Dispersion • M. Letz1, W. Mannstadt1, M. Brinkmann1, G. Wehrhan2, L. Parthier2, E. Mörsen2 • 1Schott Glas, Research and Development, 2Schott Lithotec AG • Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture • Joe Rose1, Chuck Morris1, John Schupp2, Kyle Spurlock3 • 1Pennsylvania State University, 2ACT Optics and Engineering, Inc., 3International SEMATECH • Optical Properties of Ca x Sr ( 1-x) F 2 Crystals • Robert W. Sparrow1, Charlene M. Smith2 • 1Specialty Materials Division, Corning Incorporated, 2Science and Technology Division, Corning Incorporated

  21. Poster Session: Materials • Equipment for Annealing of Ca F2 • Serhat Yesilyurt, Shariar Motakef • Cape Simulations, Inc. • The Influence of Contamination on 157 nm Optical Components • Lutz Raupach • Jenoptik Laser, Optik, Systeme GmbH

  22. Poster Session: Exp. Tools • EHS impacts associated with the emerging materials and processes of advanced photolithography • Jeffrey Heaps • International SEMATECH • 157nm 0.85NA Lens Upgrade at ISMT • Jeff Meute1, Yung-Tin Chen1, Georgia Rich1, Julian Cashmore2, Malcolm Gower2, Dominic Ashworth2, Jim Webb3, Bruce Smith4 • 1International SEMATECH, 2Exitech Ltd., 3Corning Tropel,4Rochester Institute of Technology • Process Simulation and Optimization with 157-nmHigh NA Lens for 65 nm Node • Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean • International SEMATECH • Extreme-NA Water Immersion Lithography for 35-65 nm Technology • Bruce Smith, Hoyoung Kang, Anatoli Bourov • Rochester Institute of Technology

  23. Poster Session: Exp. Tools • Fluor : Frontline Lithography Using Optical Refraction,The European Initiative to Enable 157nm Lithography • Judon Stoeldraijer1, Mieke Goethals2, Wolfgang Henke3, Ewald Mörsen4 • 1ASML Veldhoven, 2IMEC, 3Infineon Technologies AG, 4Schott Lithotec AG

  24. Poster Session: Resists • UV2Litho : Usable Vacuum Ultra Violet Lithography • A.M. Goethals1, R. Jonckheere1, F. Van Roey1, Jan Hermans1, A. Eliat1, K. Ronse1, P. Wong2, P. Zandbergen3, M. Vasconi4, E. Severgnini4, W. Henke5, C. Hohle6, D. Henry7, Ph. Thon7, L. Markey7, P. Schiavone8, D. Fuard8 • 1IMEC, 2ASML Veldhoven, 3Philips Research, 4STMicroelectronics S.r.l Agrate Brianza, 5Infineon Technologies AG Dresden, 6Infineon Erlangen, 7STMicroelectronics Crolles, 8CNRS • Printing 65nm Dense Lines by Using Phase Masks at157 nm Wavelength • L.A. Wang, H. C. Chen • Institute of Electro-Optical Engineeing, National Taiwan University

  25. Poster Session: Resists • New Silsesquioxane and Siloxane Based Resist Copolymersfor 157nm Lithography • V. Bellas1, E. Tegou1, I. Raptis1, E. Gogolides1, P. Argitis1,E. Sarantopoulou2, A.C. Cefalas2 • 1Institute of Microelectronics, NCSR Demokritos, 2Institute of Physical and Theoretical Chemistry, NHRF • Impact of Resist Absorbance on CD Control • Laurent Markey1, Peter Zandbergen2 • 1STMicroelectronics, 2Philips Semiconductors • Thermal Behavior of Dissolution InhibitorsGeunsu Lee1, Paul Zimmerman1, Will Conley1, Daniel Miller1,Charles Chambers2, Brian Osborn2, Shiro Kusumoto2, C. Grant Willson2 • 1International SEMATECH, 2Department of chemistry, University of Texas

  26. Poster Session: Resists • Parameter Extraction for 157nm Photoresists • Will Conley1, J. Bendik2, Daniel Miller3, Paul Zimmerman4, Kim Dean3,John Petersen5 , Jeff Byers6, Ralph Dammel7, Raj Sakumari7, Frank Houlihan7 • 1Motorola assignee to International SEMATECH, 2Dynamic Intelligence Inc. 3International SEMATECH, 4Intel assignee to International SEMATECH, 5Petersen Advanced Lithography, 6KLA-Tencor; Finle Technologies Division,7Clariant Corporation • Fluoropolymer Resists for 157 nm Lithography • Vaishali Vohra1, Katsuji Douki1, Xiang-Qian Liu1, Young-Je Kwark1, Christopher Ober1, Will Conley2, Daniel Miller2, Paul Zimmerman2 • 1Department of Materials Science & Engineering, Cornell University, 2International SEMATECH • Molecular Anisotropy in 157nm Photoresist Materials • Jeanette Roberts, Robert Meagley, Adam J. Schafer • Intel Corporation

  27. Poster Session: Resists • Negative Photoresist for 157 nm Microlithography • Paul Zimmerman1*, Brian Trinque2, Will Conley3, Daniel Miller4, Ralph Dammel5, Andrew Romano5, Raj Sakumari, Shiro Kumamoto2, Hoang Tran2, Matthew Pinnow2, Ryan Callahan2, Charles Chambers2, C. Grant Willson2 • 1Intel assignee to International SEMATECH, 2Departments of Chemistry and Chemical Engineering, University of Texas, 3Motorola assignee to International SEMATECH, 4International SEMATECH, 5Clariant Corporation • Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization • Osamu Yokokoji1, Shun-ichi Kodama1, Isamu Kaneko1, Yoko Takebe1, Shinji Okada1, Yasuhide Kawaguchi1, Shigeo Irie2, Seiichi Ishikawa2, Minoryu Toriumi2, Toshiro Itani2 • 1Asahi Glass Co. Ltd.,2Selete • Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report • Iqbal Sharif1, Darryl DesMarteau1, Will Conley2, Paul Zimmerman3, Daniel Miller4, Guen Su Lee5, Charles Chambers6, Brian Trinque6, Takashi Chiba6, Brian Osborn6, C. Grant Willson4 • 1Clemson University, Dept of Chemistry, 2Motorola assignee at International SEMATECH, 3Intel assignee at International SEMATECH, 4International SEMATECH, 5Hynix assignee at International SEMATECH, 6Department of Chemistry & Chemical Engineering, University of Texas at Austin

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