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GaN / InGaN 極化之能帶示意圖

總結. 極化效應的存在會影響元件的能帶結構及量子效率，此現象在量子井 ( Quantum Well ， QW ) 中更是明顯，即所謂的量子侷限效應 。 ( Quantum Confined Stark Effect, QCSE ) 並且， QCSE 對於較寬的量子井影響更加顯。. Eg. GaN / InGaN 理想無極化之能帶示意圖. GaN / InGaN 極化之能帶示意圖.

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GaN / InGaN 極化之能帶示意圖

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  1. 總結 • 極化效應的存在會影響元件的能帶結構及量子效率，此現象在量子井 ( Quantum Well，QW ) 中更是明顯，即所謂的量子侷限效應 。( Quantum Confined Stark Effect, QCSE )並且，QCSE 對於較寬的量子井影響更加顯。 Eg GaN/InGaN 理想無極化之能帶示意圖 GaN/InGaN 極化之能帶示意圖

  2. 能帶在強大的極化電場作用下嚴重地傾斜，因此電子與電洞各別被侷限於量子井的兩側，導致電子與電洞的波函數 ( wave function ) 在動量空間上的重疊率下降，而增加輻射復合發光之生命期 ( radiative lifetime )、降低電子與電洞的輻射復合速率 ( radiative recombination rate ) 及內部量子效率，並且發光波長較長於極化效應較低的量子井波長，產生紅位移 ( red shift )。

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