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Waveguide Ge-PD Simulation

Waveguide Ge-PD Simulation. Jeong -Min Lee (sannmw@gmail.com). Ge-PD Simulation. Lumerical Device Current-voltage characteristic Band structure Charge ( J n , J p , …) Doping ( N A , N D , ...) Electrostatics ( E , V, …) Mobility ( μ n , μ p , …). Lumerical FDTD

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Waveguide Ge-PD Simulation

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  1. Waveguide Ge-PD Simulation Jeong-Min Lee (sannmw@gmail.com)

  2. Ge-PD Simulation • Lumerical Device • Current-voltage characteristic • Band structure • Charge (Jn, Jp, …) • Doping (NA, ND, ...) • Electrostatics (E, V, …) • Mobility (μn, μp, …) • Lumerical FDTD • Photo-generated carriers

  3. Ge-PD Structure <Top-view> <Cross-section> • Doping concentration • P-type Si: 2x1018 /cm3 (constant doping) • i-Ge: 2x1013/cm3 (constant doping) • N-type Ge: ~ 5x1018 /cm3 (diffusion doping)

  4. Procedure • Configure materials • Draw & configure 3-D structure of Ge-PD • Draw & configure doping layers • P-type, intrinsic, n-type • Draw & configure device region • Simulation area • Define & configure electrical contacts • Cathode, anode • Device simulation • Electric field, dark current simulation • FDTD simulation • Photo-generated carrier calculation • Device simulation • Photocurrent, responsivity simulation

  5. Material Setting: Ge

  6. Oxide

  7. Silicon Substrate

  8. Silicon Taper

  9. Ge

  10. Cathode

  11. Anode & 5.3 (another anode)

  12. P-Type Si (Constant Doping)

  13. Intrinsic Ge (Constant Doping)

  14. N-Type Si (Diffusion Doping)

  15. Device Region: Simulation Area  2D simulation (/μm)  PD length

  16. Device Region Setting (Simulation Area)

  17. Electrical Contact Setting

  18. Simulation Results: Doping Profile

  19. Simulation Results: Electric Field Distribution At VR = 2V

  20. Simulation Results: Cathode Current (Dark)

  21. Simulation Results: Anode Current (Dark)

  22. FDTD: Structure 1. Draw structure

  23. FDTD Simulation Region 1 2 3 4

  24. Source (1/2): Mode Source 1 2

  25. Source (2/2): Mode Select 4 3 5

  26. Generation Rate 1 2 4 5 3 6. Click Run

  27. Edit Code sourceintensity(f)  sourcepower(f)

  28. Make Generation Rate File Make ‘CW_generation.mat’ file in working directory

  29. Device: Import Generation Rate 1 2 3

  30. Simulation Results: Photocurrent (Cathode)

  31. Simulation Results: Responsivity Load ‘Bias vs. Responsivity.lsf’ Run

  32. Code • Bias vs. Responsivity.lsf Pin=1e-3; # Watts I=-2*getdata("Device region", "anode.I"); V=linspace(0,4,5); Resp=I/Pin; plot(V,I*1e6,"photo detector bias voltage(V)","I_(illumination) uA "); plot(V,Resp,"photo detector bias voltage(V)","Responsivity (A/W) ");

  33. Exercise • Draw same structure of Ge p-i-n PD. • Doping concentration conditions: • P-type: 2x1019 /cm3 • Intrinsic: 2x1013 /cm3 • N-type: 5x1019 /cm3 (ref concentration: 1x1017 /cm3) • Plot doping profiles (NA, ND). • Plot electric-field profiles at 1- and 4-V reverse bias voltage. • Plot dark current, photocurrent, and responsivity according to reverse bias voltages from 0 to 4V.

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