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Status of SPD electronics Very Front End. Review of ASIC runs What’s new: RUN 4 and 5 Next Actions. SPD VFE ASIC Architecture. Review of ASIC runs. TESTED. RUN1 (Sep 2000) Test separate blocs 1 full channel RUN2 (June 2001 – test beam) 4 full channels test ECL vs CMOS output
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Status of SPD electronicsVery Front End Review of ASIC runs What’s new: RUN 4 and 5 Next Actions
Review of ASIC runs TESTED • RUN1 (Sep 2000) • Test separate blocs • 1 full channel • RUN2 (June 2001 – test beam) • 4 full channels • test ECL vs CMOS output • RUN 3 (Jan 2002) • New tunnable subtractor • 1 full channel with digital control • On-chip DAC to program thresholds • RUN 4 (May 2002) TESTED Under TEST In FAB
Features • 0.8 m AMS BiCMOS Technology • Processing speed 40 MHz • Analog Processing + Digital Control • Dual channel • Fully differential • SEU and SEL protection for digital logic • Triple voting (custom output stage in FF) • Guard rings • Power consumption < 2 W / 64 channels • Signal range. 0 to 5 MIP • Electronics resolution 5% of 1 MIP • Dynamic range: 40 dB (7 bits)
Run 2 Sept 2001 4 full channels test ECL vs CMOS output Pile-Up compensation fixed at 17%
Run 2: Experimental Results (I) Offset (Output Zero Error) + 38.6 mV io = 70 mV r.m.s. Gain 16.51 (for atypical input pulse) io = 0.091 r.m.s. T reset 5.5 ns (for 1 V output) Noise about 1 mV r.m.s Output range >1V for an arbitrary input signal Linearity error < 0.5 % full scale
Run 2: Experimental Results (II) • Discriminator internal signals for a typ. pulse • Interleaved operation of the 2 subchannels
Run 3 January 2002 1 full channel with digital control New tunnable subtractor On-chip Digital to Analog Converter to program thresholds
Run 3 7 bits pseudo-differential DAC 1b for sign 6b for modulus R-2R architecture DAC transfer function 3 different ref voltages INL 3 different ref voltages
PMT DC current problem PMT supports only 100 uA DC (18 uA with present base) SPD at hottest point (10 % occupancy) Solution • Build a new base supporting 100 uA • Reduce PMT gain (100 fC / MIP). • Increase PMT load Resistor (150 400) • Increase ASIC gain (factor 3) • Decrease threshold for 1 MIP by a factor 2. 64 channels * 1pC / MIP * 0.1 / 25 ns = 250 uA
RUN 4 • Sent 24-05-2002 • Complete processing channel with digital control. • Separate analog blocks + digital ctrl • Works at 3.3 V to reduce power consumption. All blocks have been resdesigned at transistor level • The previous power consumption per chip was 1.2 W, now it will be around 600 mW. • Higher gain (x3) to meet PMT DC current limit requirements. A fully differential preamplifier is added before the integration stage. • Towards final prototype • Will be tested Sep-Oct 2002
RUN2/3 RUN4 Input stage Integrator FEA + integrator 1 MIP signal (output) 200 mV 100 mV Range (output) 5 MIP (1 V) 5 MIP – 10 MIP (linearity ??) Noise (output) (random + pick-up) 1 mV r.m.s. (calculated and measured) 2-3 mV r.m.s. (calculated and simulated) Front End Amplifier • Differential input. common mode interference is cancelled • Offset compensation is possible using external resistors. • High Bandwidth (> 200MHz). • Low gain (6). • Low impedance output (independent integration switch). • Layout optimised for matching: input transistors and resistors and current sources. 70 mV r.m.s. (15 samples) Offset (output) ??
Modified Track & Hold DAC TRANSCONDUCTOR 0 < < 1/2 GUGGENB TRANSCONDUCTOR OUTPUT STAGE Integ Comp TRANSCONDUCTOR Differential Signal
DAC TRANSCONDUCTOR OUTPUT GUGGENB Integ Comp TRANSCONDUCTOR STAGE TRANSCONDUCTOR
RUN 5 • Design Completed • Area: 30 mm2 • 8 full channels + digital ctrl • Works at 3.3 V to reduce • power consumption • Higher gain to meet • PMT current limit • requirements.