ERD TWG Emerging Research Devices Telecon Meeting No. 4

1. ERD TWGEmerging Research DevicesTelecon Meeting No. 4 Jim Hutchby - Facilitating Thursday, January 22, 2009 5:00 pm – 6:30pm Eastern US Time Pacific US Central US Eastern US  Europe Taiwan/Korea Japan Schedule No. 2:         2pm 4pm        5pm 11pm 6am 7am

2. Discuss and decide new structure for the 2009 ERD Logic Section tables. Jan. 22, 2009 ERD Telecon Meeting Objectives

3. 5:00 pm Check in & review meeting Hutchby Objectives/Agenda 5:05 Review proposal for New Logic Tables Bourianoff Hiramoto-san 5:30 Discuss and Decide the New Hiramoto-san 2009 ERD Logic Table structure Bourianoff 6:00 Discuss 2009 ERD Logic Table Bourianoff Entries Hiramoto-san 6:30 Adjourn Meeting January 22, 2009 ERD Telecon Meeting Agenda

4. Logic table structure • Beyond CMOS- non-digital • Spin wave • Domain wall • NEMS • Electrochemical • Molecular • All spin • BISFET • MQCA • CMOS Extension • CNTFET • GNRFET • III-V Channel replacement • Ge channel replacement • Nanowire FETs • Beyond CMOS- • Digital functionality • SETFET • SPINFET • CMOL • ?????????????? • Tunnel FET • IMOS

5. Table ERD7a Emerging Research Logic Devices—Demonstrated and Projected Parameters

6. Table ERD7b Alternative Information Processing Devices

7. Logic Table T. Hiramoto, Dec. 14, 2009. 2007 Version 2 + 1 Table 2009 Version (Proposed) 3 + 1 Table (1) Emerging Logic (General Purpose) (1) CMOS Extension (2) Alternative Info. Processing Devices (2) Beyond CMOS (CMOS Supplement) (3) Pure Beyond CMOS (CMOS replacement) Transition Table Transition Table Classified by Principles and Materials Classified by Operation Principles

8. Evolution of Extended CMOS Elements Existing technologies New technologies Beyond CMOS ERD-WG in Japan year CMOS Extension CMOS Supplement CMOS Replacement

9. (1) CMOS Extension Table

10. (2) Beyond CMOS (CMOS Supplement) - Spin MOSFET (Including STT) - SET (including Molecular SET) - CMOL

11. (3) Beyond CMOS (CMOS Replacement) - Spin Wave - Domain Wall - NEMS - Electrochemical (Atom Switch, Memoristor?) - Molecular Computing Devices - Spin Transistor

12. Operation Principles and Materials

13. ERD Logic Section for 2009 ITRS Logic Workshop San Francisco, Ca. Dec 14, 2008 George Bourianoff facilitating

14. Proposed Chapter Structure • Transition table - same structure 2007 • Table 1 - “CMOS Extension” • Include (devices with FET functionality) • Low dimensional structures • III-V and Ge channel replacement structures • Carbon-based material channel replacement structures • BTBT devices ? • ??????

15. Proposed Chapter structure (Cont) • Table 2 “Beyond CMOS” devices • Category A “Digital Functionality” • Spin Devices • NEMS switches • Atomic and molecular switches • ????? • Category B “Non Digital Functionality” • Spin devices • Multi-ferroic devices • Molecular devices • ???

16. Table 1 Proposed changes – “High Performance” >”CMOS Extension” • Low dimensional structures :Carbon Nanotube FETs, nanowire FETs, Nanowire heterostructures, GNR FETS. • High mobility channel replacement FETs including III-V and Ge • Single electron devices- Move to table 2 • Molecular devices including atomic switches- focus on molecule on CMOS architecture (CMOL) concept -Move to table 2 • Ferromagnetic and coherent spin devices– Move to table 2 • Add Band to Band Tunneling Devices ??

17. Proposed CMOS Extension Entries • Low dimensional structures (nanowires) • III-V and Ge channel replacement structures • Carbon-based material channel replacement structures (CNT and GNR) • BTBT devices ? • ??????

18. 2007 Alternative Device Table

19. Table 2 proposed changes “Alternative Information Processing” > “Beyond CMOS” • Resonant Tunneling Diodes – Move to transition table • Digital Functionality • Multi-ferroic devices • Spin devices • Single Electron devices • Non digital functionality • Molecular Devices – CMOL • Bi-layer graphene devices • MQCA • Frequency Coherent Spin Devices • RF devices • Do we want to include some “architecture driven” device?

20. Proposed “Beyond CMOS” entries • Category A “Digital Functionality” • Spin Devices • NEMS switches • Atomic and molecular switches • ????? • Category B “Non Digital Functionality” • Spin devices • Multi-ferroic devices • Molecular devices • ???

21. Technology Entries(1) • FET extensions • Low dimension Channel replacement category • CNTFETS and Nanowire FETS • Discuss CNTFETs with PIDs • High mobility channel replacements • Send III-V and Ge to PIDs • Graphene Nanoribbon devices

22. SETs • Move to Table 2 • Some recent work still suggests logic applications • Emphasize non logic applications (recognition) • SETs have been around for a long time • Stray charge will always be problem Nature of Nanotechnology advance online

23. Molecular devices • Move to table 2 • Emphasize potential applications in crossbar architectures, CMOL • Recent progress will be reviewed • Some people believe strongly that the technology has great potential

24. Ferromagnetic and spin transistor • Merge categories and move to table 2 • Emphasize non volatile functionality • Include MQCA and domain wall applications • STTRAM research is driving progress in materials and process

25. Band to band tunneling devices • Include as a category in table 1 ??? • Include other steep SS devices • Most devices suffer from low Isat or high Vd • CNT tunnel FETs

26. Resonant Tunnel Diodes • Recommend moving to transition table • Pros • Not much recent progress for any logic application • Cons • It is an interesting device with NDR • Many people feel strongly about it

27. Multiferroic and magnetoelectric devices • Include multiferroic tunnel junctions, magnetoelectric amplifiers, magnetoelectric drivers and detectors • Significant progress in RT mutiferroic and magnetoelectric materials e.g. BFO

28. ERM table of applications

29. Proposed structure - table 1

30. Proposed structure –table 2

32. Coupling to ERM