30 likes | 194 Views
Steve Hodgskiss Technical Principal. Date of Birth: 01.09.1954 British With Philips since : 09.10.1978 Grade : 70. Experience : May 03 Technical Principal Philips Semiconductors Hazel Grove UK May 01 Development Manager Philips Semiconductors Hazel Grove UK
E N D
Steve HodgskissTechnical Principal • Date of Birth: 01.09.1954 • British • With Philips since : 09.10.1978 • Grade : 70 Experience: May 03 Technical Principal Philips Semiconductors Hazel Grove UK May 01 Development Manager Philips Semiconductors Hazel Grove UK May 85 Power Dev Project Leader Philips Semiconductors Hazel Grove UK Feb 84 Senior Development Engineer Philips Semiconductors Hazel Grove UK Oct 80 Development Engineer Philips Semiconductors Hazel Grove UK Oct 78 Trainee Development Engineer Philips Semiconductors Hazel Grove UK 1978-82 Thyristor (phase 3) & HV passivation (polydox) projects 1982-85 Secondment to Southampton to support DMOS development 1985-92 HV DMOS, IGBT 1992-01 Trench feasibility, Gen1,2,3 project leader 2002-05 Technology manager – various support functions (IP, TCAD, roadmaps) Ambition: To facilitate the acceleration of innovation speed To give significant hands-on contributions to successful projects To help others to realise their full potential 4
Steve HodgskissTechnical Principal Pen Portrait Strengths • Knowledge and experience of Power MOSFET designs, processes, performance and interactions • Track record of leading successful projects resulting in profitable volume sales • Common sense and pragmatism • Effective organisation methods • Democratic management style • Firm believer in teamwork Areas for improvement: • Strengthen device Physics and applications knowledge and understanding • Rebuild self-esteem and confidence by working within an effective new structure 5
Steve HodgskissTechnical Principal Action Plan: • Contribute to a review of departmental structure, working practices and innovation processes • Spend >50% of time on active involvement in projects • Establish a programme of training material for Innovation Dept 6