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Crescimento de Camadas Epitaxiais

Crescimento de Camadas Epitaxiais. LPE VPE MBE MOCVD - Metal Organic Chemical Vapour Deposition. Pode ser realizado por diferentes técnicas. Reator de crescimento epitaxial da Aixtron localizado na PUC-Rio. Reator MOCVD. Parâmetros de crescimento :. Temperatura Pressão Gases:

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Crescimento de Camadas Epitaxiais

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  1. Crescimento de Camadas Epitaxiais • LPE • VPE • MBE • MOCVD - Metal Organic Chemical Vapour Deposition Pode ser realizado por diferentes técnicas

  2. Reator de crescimento epitaxial da Aixtron localizado na PUC-Rio

  3. Reator MOCVD Parâmetros de crescimento: • Temperatura • Pressão • Gases: III: TMGa, TMIn, TMAl V: AsH3, PH3, Dop. p: CBr4, TMZn Dop. n: SiH4 • Fluxos

  4. TMAl,TMIn PH3 Crescimento Epitaxial TMGa AsH3 Substrato GaAs

  5. AlAs InP InAs GaxAl1-xAs InxGa1-xAs GaAs

  6. a’ > a InAs a a Material casado Material descasado AlGaAs InAs tensionado GaAs GaAs

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