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Dennis A. Adams October 12, 2005

Northrop Grumman CMOS / SONOS EEPROM Reliability Overview for NASA GSFC EEPROM Reliability Workshop. Dennis A. Adams October 12, 2005. Outline. Background NGC SONOS products description 64K / 256K EEPROM reliability data 1Mb EEPROM characterization data Summary. SONOS Team Summary.

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Dennis A. Adams October 12, 2005

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  1. Northrop Grumman CMOS / SONOS EEPROM Reliability Overviewfor NASA GSFC EEPROM Reliability Workshop Dennis A. Adams October 12, 2005

  2. Outline • Background • NGC SONOS products description • 64K / 256K EEPROM reliability data • 1Mb EEPROM characterization data • Summary

  3. SONOS Team Summary

  4. Oxide Oxide Nitride TunnelOxide TunnelOxide SONOS Technology + V - V Nitride - V + V

  5. SONOS Technology Trends Next Generation System Insertion 64K/256K EEPROM 1.25um foundry node 1MB EEPROM, 0.8um 16MB EEPROM, 0.35um SONOS Technology Leveraged in Fire Control Radar ASIC Controllers Next Generation ASIC Controllers • Higher Frequency • Smaller Antenna Grid Spacing • Multi-function Apertures • Programmable Arrays • Burst Buffer Memory X-Band Twin PakTM F/A-22, JSF, ABR

  6. Production IC Deliveries Fabrication line @ ~50% capacity Deliveries include over 12,000 SONOS EEPROMs and over 300,000 ASICs with embedded SONOS EEPROM Total Production Deliveries Qty Delivered

  7. 1Mb (128Kb x 8) EEPROM 1995 2000 2005 2010 64Kb 1.25 µm Production 256Kb 1.25 µm Production 1Mb 0.8 µm Dev./Qual Production 4Mb 0.50 µm Dev./Qual Prod. 16Mb 0.35 µm Dev./Qual Radiation Hardened EEPROM Roadmap 1M EEPROM manufacturability is greatly enhanced by the fact that it is 2 generations behind our process capability.

  8. Rad Hard EEPROM Product Family

  9. 64k/256k EEPROM Cross Section Ti Al Metal 2 TiW M2 IMD Ti IMD M1 Al IMD Metal 1 TiW IMD BPSG Poly BPSG FOX FOX SONOS Gate Dielectric • 190A MOS • Gate Oxide P tSi2 Poly Gate P+ P+ P+ Spacer Self aligned N+ P-Well N-Well N epi N+ Substrate

  10. Years of proven EEPROM reliability w/ NGC SONOS • Microelectronics & Photonics Test Bed (MPTB) Experiment (64Kb) • Qty=4 W28C64FHP, 64Kb EEPROMs • Experiment ongoing >5 years • TID: ~65Krads with no failures • 3 devices constantly written (2, 17X a day and 1, 1X a day) • 3.8E4 writes/device with no failures (spec is 1E4 writes) • 1.2E5 total writes (19.85 min.) with no failures • 1 device written ~3E3 times early in the experiment and then just read for retention with no failures • 5.1 years retention with no failures • NGC SONOS EEPROMs have no requirement for powering down when not in use

  11. 256k EEPROM extended life test data positive • Group C Life Tests (256Kb) • 150°C life test data • 131 parts/27 wafer lots [131,000 device hours @ +150 C ] accumulated to date with no failures • Equivalent to 172,000 device hours at 125°C with no failures • Extended Life Test (256Kb) • Qty=15 W28C256FHP, 256Kb EEPROMs • 150°C life test until failure with intermediate (~500 hrs.) test “pulls” • 10,000 hours accumulated to date with no failures • Equivalent to 300,000 device hours at 125°C with no failures • All (92 parts) 64k/256k EEPROMs have passed Group E total dose tests at 150 krads [ w/50% overdose to 225 krad(Si) ]

  12. NGC QA/PAP SCREENING PROCEDURES Note 1: Only applies to nonvolatile memory products

  13. SONOS – based nonvolatile memory storage (Silicon – Oxide - Nitride – Oxide- Silicon) Inherent rad hard advantages over floating gate memories Fully functional 1M EEPROM (128kx8) die on first wafer probed (1/04) Total dose hardness - >300 krads 64kx16 prototyped during ‘05 1st production parts Q1 ’07 Joins NGC 64K/256K EEPROM family (used in over 25 space applications) SONOS the only nonvolatile memory technology qualified for >100 krad applications Industry’s 1st Rad Hard 1M EEPROM

  14. Rad Hard 1Mb EEPROM Characteristics

  15. 1M EEPROM Cross Section(Full CMP Planarization)

  16. 1Mb SONOS Thermal Acceleration - +25 C to +225C M2 M2 M1 M1 poly

  17. 1 Mb SONOS Endurance Cycling at 1E6 cycles M2 M2 M1 M1 poly

  18. 1Mb SONOS Memory Retention – 0 to 1E6 cycles M2 M2 M1 M1 poly

  19. Preliminary 1Mb EEPROM Life Test Results • All parts received a 2 day +150C static burn-in prior to life test • Ten (10) 64Kb x 16 EEPROMs subjected to 401 hours @ 150C (equivalent To 802 hours at 125C) • Ten (10) 128K x 8 EEPROMs subjected to 308 hours @150C (equivalent to 616 hours at 125C) The 1Mb EEPROM life test resulted in no failures. Test on-going with retests every 500 hours.

  20. NGC Funded 0.35µm Facility Upgrade Results: 0.35µm Poly Gates Fully Planarized BEOL 0.5µm ASICs

  21. 6109 16MB Test Chip Design Database SNL EEPROM Memory Test Arrays 0.35um tech Process Monitor test structures Fuse test structures Controller ASIC with Embedded PSONOS Large Area Interconnect test patterns SONOS test structure arrays Scaled Controller ASIC

  22. Summary • SONOS technology has a proven track record for meeting stringent reliability and radiation hardness requirements for space and avionics applications • Over 12,000 NGC 64K/256K EEPROMs delivered for space/ hi rel applications • No field failures • No QCI failures • 64K/256K EEPROMs available off the shelf • 1M EEPROMs available 1Q’07 • SONOS will continue to be a critical core technology for future Northrop Grumman systems

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