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Memory Level General Subgroup CTL Modeling. Update. May 11, 2007. Confidential. Memory Level General. Members: Mouli (Leader), Jay, Karen, Geir Scope: Define CTL constructs to describe the Memory Level Information excluding Address/data mapping, Redundancy and Memory Access Mechanism
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Memory Level General SubgroupCTL Modeling Update May 11, 2007 Confidential
Memory Level General • Members: • Mouli (Leader), Jay, Karen, Geir • Scope: • Define CTL constructs to describe the Memory Level Information excluding Address/data mapping, Redundancy and Memory Access Mechanism • Milestone: VTS2007 ( Delayed)
Memory Level GeneralInitial List • Memory Type • SRAM, DRAM, ROM, FLASH, Single Program ROM, CAM • Synchronous, Asynchronous • Memory template Name • Logical Ports–(x)RW, (y)R, (z)W, (m)M(Match ports) • Port synchronicity • Retention Time • Bypass Mode • Memory Timing (can we make it more general that provide all timing information on the memory. May be in the form of a wrapper, would also include ADT….) • Write Mode Operation (Select During Write Through) • Data Input/Out Stages • Flop, Latch, None • Number of stages • Count Ranges for Bank, Row, Column _ Tri State condition
What Memory Attributes are Covered • Memory Functional Architecture • Describe memory functionality for various memory types at the I/O level • Eg., Read/Write/Write-through/Write-back Operations • Memory Test Architecture • Testing the memory core • Describe the data/address/control signals needed to test the memory core • Testing shadow logic • Describe all signals (I/O level) that enable shadow logic test
Memory Functional ArchitectureAttributes • Memory Structure • Memory Functions ( Are these covered by access or Pin function sub groups) • R/W behaviour • Multiport contentions • Write-back, Write through operations Input# Address Lines# Data Lines# Enables (R/W, CEN, ...)# R/W, M ports# ClocksRegistered inputs Memory Type: SRAM/ROM/DRAM/FLASH/CAM Synchronous/AsynchronousPipelined/Non-pipelinedColumn Mux#banks/rows/columnsRetention time Output# Data LinesTristate condition
Memory Test Architecture Attributes • Test Structure • Test Functionality ( covered by other sub groups?) Input# Test Mode signals(Memory BIST, Logic BIST, ATPG)# Bypass Mode signals ( asynch, synchronous) # Test Data, Address, Control signals ( for shadow logic test)# Other Test Modes ( margins, bit-cell variabilities, etc) Memory Core Output#Test result signals( Done, Error, Test Data)
Sample Template for Memory General Attributes STIL 1.0 { CTL 2005; Design 2005; } Variables { IntegerConstant maxdata ; IntegerConstant maxaddr ; IntegerConstant addrmax ; } Signals { */ Address[Range], Data [Range], Controls in; Data [Range] out; Test address [Range], Test Data [Range} out; Test Control [Range] out; */ . . } Environment “ “ { CTL { Memory Properties { /* ( define rows/bank, CM, synch/asynch, R/W port contentions) ; */ } } CTL Mission Mode { Test Mode Normal ; Family (DRAM/SRAM/ CAM/ Flash/ROM): Internal { / * define all the signals * / } CTL BIST_mode { TestMode Internal Test: Internal { / * define all the signals * / } CTL Bypass_mode { TestMode Bypass Internal { / * define all the signals * / }