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HI-TECH

HI-TECH. Coordinated Project FPA2008-04934. M. Chmeissani IFAE / E. Cabruja CNM. Outline. Motivation and Objectives Scientific background Proposal Overview Work Plan Budget Conclusion. Motivation and objectives (I).

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HI-TECH

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  1. HI-TECH Coordinated Project FPA2008-04934 M. Chmeissani IFAE / E. Cabruja CNM

  2. Outline • Motivation and Objectives • Scientific background • Proposal Overview • Work Plan • Budget • Conclusion

  3. Motivation and objectives (I) • Spain lacks the experience and the know-how in the field of high density interconnection technology. This has limited the growth of the pixel sensors community. This is reflected in the weak visibility of Spanish groups in HEP vertex detectors. • This know-how is essential for R&D using bump-bonding/flip-chip processes to evaluate a pixel ASIC (like Medipix2 chip), or pixel detector (like the 3D silicon developed at CNM) costs a lot of Money and time. NRE just to start the process are around 30k€

  4. Motivation and objectives (II) • R&D requires small quantities and this implies low priority in the production queue and less allocated time from the supplier to understand the arising problems. • If there is a problem, then it is “from your ASIC”, or “your detector”, or from both…the last thing you will hear “the fault is our bump-bonding process”! • Under such working conditions, one has to have a lot of money, detectors, ASICs, and time. It took more than 5 years for the Medipix2 collaboration to get to an acceptable yield of bump-bonding on Si detectors. • Within the Dear-Mama project we performed the bump-bonding of Medipix2 chips on CdTe detectors with very disappointing results.

  5. Motivation and objectives (III) • HI-TECH aims to the development of bump-bonding/flip-chip packaging capabilities in Spain, using Sn/Pb and In electroplating and flip-chip on solid state detectors (using Süss FC150 flipchip bonder) with high yield in quality and in quantity • HI-TECH will convert the results of the R&D into service and support to facilitate Spanish research groups, in particular, groups working in High Energy Physics interested working in the hardware pixel related detectors

  6. Motivation and objectives (IV) • The scope of the R&D will cover different types of solid state detectors to cover wide range of pixel related fields such as: Vertex/tracking detectors in HEP, Medical imaging applications, research in Synchrotron (Pilatus Project) • Transfer the technology/know-how to the Spanish industry

  7. Scientific background • IFAE and CNM have worked together in Dear-Mama, an EU-FP5 project to build a X-Ray mammography system • IFAE and CNM are now working in a PROFIT (Spanish ministry of industry) to develop a 3D biopsymachine using also X-Ray detectors. • IFAE and CNM have worked in project FULLPIX on flipchip • IFAE is member of the Medipix2 collaboration.

  8. Scientific background • CNM has been working in bumping technologies since 1995. An EU-FP4 project called SUMMIT was the starting point for a standard MCM-D technology. (400um pitch) • CNM has then worked in CIRRUS, a EU-FP5 project to develop a HDP technology, start-point of the bumping technology to be developed in the project presented. • CNM, together with IFAE, has obtaining promising results in FULLPIX Electroplated bump Reflowed bumps

  9. Scientific background • CNM has also participated in a couple of projects regarding the fabrication of CMOS imagers for infrared sensors: SEADIR and SIRIO • IFAE holds two patents on digital mammography and 3d imaging • CNM holds a patent on a mosaic-like detection system including a read-out ASIC

  10. Project Proposal (I) • Hi-TECH is a 3 years R&D project • Passive bumping technique of Sn/Pb, with a pitch of 55 µm using daisy-chain • Active bumping technique of Sn/Pb, with pitch of 55 μm on Medipix2-Si detector

  11. Project Proposal (II) • Passive bumping technique of In, with a pitch of 55 µm using daisy-chain • Active bumping technique of In, with pitch of 55 μm on Medipix2-CdTe detector • Active bumping technique of In, with pitch of 55 μm on Medipix2-GaAs detector

  12. Project Proposal (III) • Through-hole vias in silicon for 3D packaging. (CNM has recently bought a wafer grinder and a CMP) • Flip-chip technique optimisation using the Süss FC150 to achieve good quality and lead-time

  13. Workplan

  14. Workplan

  15. Budget • Staff • 2 Engineers for CNM 132.000€ (2y.) • 1 PostDoc, 1 Engineer for IFAE 132.000€ (1y.) • Equipment • Computer for IFAE 1.500€ • Computers for CNM 1.500€ • Consumables • Runs and masks for CNM 96.000€ • MPX wafers, Si, GaAs, CdTe detectors for IFAE 78.000€ • Travel • 15.000€ for CNM • 20.000€for IFAE • Others • 48.200€ for IFAE

  16. Conclusions • Hi-TECH is a project that will open the door for interested groups to have active role in pixel sensor projects, whether it is related to pixel chip design, pixel sensor design, or simply packaging (flip-chip) • The know-how, derived from this project, can be used in wide range of applications • Hi-TECH will be in time to assist Spanish groups interested in taking a role in the upgrade of the vertex detector at Super LHC

  17. Thank you for your Attention!

  18. Suss MicroTec FC150 This is the first machine of this type in Spain! There are around 200 FC150 world wide. There are around 20 in France. These numbers tells you the current standing of Spain in this field.

  19. Indium bump-bonding • The yield of good bump-bonded pixels was very low • The bump-bonds showed short life-time 16-06-2003 27-06-2003 21-07-2003 • Detectors were damaged during the preparation for Bump-bonding Before Bump-bonding After Bump-bonding

  20. Test pulse image Noise image Switching from In to SnBi bump-bonds

  21. SIM Analysis for Clean pad

  22. SIM Analysis for soldered pads

  23. Results……

  24. Chip side Detector side Solder bump Daisy Chain

  25. Scientific Background DearMama-I (Mammography) DearMama-II (Bone radiography) Image Capture: <3 seg Post-processing: 20 seg Pixel size: 55 µm Final Size: 1824 cm Detector: Si, 700 µm X-Ray Tube: 20-35 kV Detector: CdTe, 800 µm X-Ray Tube: 40-120 kV

  26. Image Quality 30kV, 4mAs a-Selenium Resolution, MTF Better MTF Dear-Mama

  27. Results DM-I Si DM-II CdTe

  28. Scientific Background 3D real time Breast biopsy system. Presented in the 36th Salon of Inventions-2008 in Geneva, Switzerland

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