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CAREER: Deposition and Interface Properties of Metal Oxide Films on GaAs Theodosia Gougousi , University of Maryland Baltimore County, DMR 0846445.
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CAREER: Deposition and Interface Properties of Metal Oxide Films on GaAsTheodosia Gougousi, University of Maryland Baltimore County, DMR 0846445 Technological advancement in fields such as semiconductor devices, energy conversion, and sensor development has relied upon our ability to control matter on atomic or molecular level. Atomic layer deposition (ALD) is a technique that permits precise control of film thickness and properties. Understanding of the molecular level mechanisms and kinetic processes is essential to produce materials with well defined properties. We have i) demonstrated the existence of an interface cleaning mechanism for TiO2 and Ta2O5 ALD chemistries that involves amide precursors on GaAs surfaces, and ii) have studied the effect of temperature on this reaction for both ALD chemistries. This finding is important as it provides a pathway for the development of well controlled dielectric/GaAs interfaces and may lead to GaAs-based nanoelectronic devices with performance superior to current Si devices. ~9 nm Ta2O5 on native oxide GaAs (100) surface ~3 nm Ta2O5 on native oxide GaAs (100) surface
CAREER: Deposition and Interface Properties of Metal Oxide Films on GaAsTheodosia Gougousi, University of Maryland Baltimore County, DMR 0846445 Undergraduate student and McNair Scholar Simbarashe (Simba) Marufu investigated this summer the self assembly of octadecyltrichrolosilane (OTS) molecules on Si(100) and GaAs (100) surfaces under the direction of the PI. Simba studied the effect of temperature on the molecule assembly rate and the effect of prolonged ambient exposure on the quality of the SAM. Simba was recruited to the McNair Scholars program while enrolled in the introductory physics laboratory course taught by the PI in the Spring of 2010. One of the goals on the McNair Scholars programs is to increase the number of underrepresented minorities pursuing doctoral studies in science and engineering though early identification of eligible individuals, and by offering mentoring, support and research opportunities. C-H C-H H2O