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International Workshop on Semiconductor Pixel Detectors for Particles and Imaging September 3 – 7, 2012 in Inawashiro , Japan. A 200 Frames per Second, 1-Megapixel, Frame Store CCD camera for X-ray imaging.
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International Workshop on Semiconductor Pixel Detectors for Particles and Imaging September 3 – 7, 2012 in Inawashiro, Japan A 200 Frames per Second, 1-Megapixel, Frame Store CCD camera for X-ray imaging DionisioDoering(a), Nord Andresen(a), DevisContarato(a), Peter Denes(a), John Joseph(a), Patrick McVittie(a), Jean-Pierre Walder(a), John Weizeorick(b) (a)Lawrence Berkeley National Laboratory, Berkeley, CA (USA) (b) Argonne National Laboratory, Argonne, IL (USA)
Outline • Sensor • Buffer chip • Readout IC • X-ray camera • Readout system • Initial Results • Conclusions Pixel2012, Inawashiro - Japan
Thick fully depleted detector At VSUB = 115 V, σD = 3.7 ± 0.2 μm Produced at DALSA/Teledyne MSL@LBNL processed S. Holland SNAP- Super Nova Acceleration Probe Pixel2012, Inawashiro - Japan
Fully depleted vs. partially depleted depleted + + depleted undepleted • Fully depleted • charge cloud moves by drift • full charge collection • good point spread function • Partially depleted • charge cloud diffuses in 4 • partial charge collection • poor point spread function Pixel2012, Inawashiro - Japan
X-ray sensor efficiency Pixel2012, Inawashiro - Japan
X-ray sensor efficiency Pixel2012, Inawashiro - Japan
X-ray sensor efficiency Pixel2012, Inawashiro - Japan
X-ray sensor efficiency Pixel2012, Inawashiro - Japan
X-ray sensor efficiency Low temperature process High temperature process MBE (in R&D) Pixel2012, Inawashiro - Japan
1kFSCCD Constant area taper Mini-shift reg. Output stage ~300 µm pitchbond pads(wire-bondable) Metal strapping Pixel2012, Inawashiro - Japan
Speed issues, for the output stage Vreset Input: 2.1ns Vout CCD output rise time : 400 ns Vsclk Output: 3.7ns Vsw • Parasitic capacitance leads to a long CCD output rise time • Buffer chip • 0.35 mm high voltage CMOS • Provide bias for the detector • Recover gain Pixel2012, Inawashiro - Japan
FCRIC (1/2) Voltage integrator Output = Optimal noise filtering Switched cap preserves charge • 16 channels • Gain 8, 2, 1 • 12 + 1 bit ADC • Covers 15-bit dynamic range • Quantization error always < photostatistics • CDS – correlated double sampling ± Preamp Multi-gain integrator CDS Pipelined ADC ADU Input signal (V) Pixel2012, Inawashiro - Japan
FCRIC (2/2) Pixel2012, Inawashiro - Japan
Camera head • Top board • Bias board • Digitizer board • Frame store mask • Temperature sensors • Vacuum chamber Pixel2012, Inawashiro - Japan
Readout system (1/2) ATCA Chassis Network Connections Camera Interface Node User Client Processor Node Data Capture Module Fabric Switch Hub GUI Interface Camera Head Timing Module Sys. Config. Digital PSU RAID Array Node 10 GbE Network 1 GbE Network Custom Interface Custom Shelf Manager Pixel2012, Inawashiro - Japan
Readout system (2/2) • Image processing • Dark image subtraction, Gain correction • Zero suppression, Digital integration, Binning • Camera head communication • Copper cables • Being replaced by fiber optics module ATCA crate Camera Interface Node (CIN) Fiber optics module Pixel2012, Inawashiro - Japan
Calibration & X-ray imaging R&D • ALS at beam line 5.3.1 • ALS at beam line 8.3.2 1kFS CCD ATCA system chiller Power supply new systems are in production and will be delivered to ALS (8x), APS (2x) and (1x) EXFEL A few more will be produced to other places, contracts under negotiation. Pixel2012, Inawashiro - Japan
1kFSCCD X-ray performance Pixel2012, Inawashiro - Japan
Future developments for high(er) speed detectors 120 mm laser drilled hole Diffraction CCD Column parallel CCD 5 x 50 mm pixel CCD (spectrographic applications) 65 nm CMOS Pre-process + ADC For more info, please see Peter Denes talk 9/4 4:20pm Maurice Garcia-Sciveres talk 9/5 8:30am Pixel2012, Inawashiro - Japan
Conclusions Pixel2012, Inawashiro - Japan