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The calculation of the strain of the Si/SiGe heterostructures

The calculation of the strain of the Si/SiGe heterostructures. Presented by L. C. Li. Outline. Dislocation The strain energy The critical thickness The calculation of Si/SiGe heterostructure References. Dislocation. Edge dislocaton. Screw-type dislocaton. The strain energy.

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The calculation of the strain of the Si/SiGe heterostructures

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  1. The calculation of the strain of the Si/SiGe heterostructures Presented by L. C. Li

  2. Outline • Dislocation • The strain energy • The critical thickness • The calculation of Si/SiGe heterostructure • References

  3. Dislocation Edge dislocaton Screw-type dislocaton

  4. The strain energy • The lattice mismatch absorbed via strain • For (001) growth

  5. Energy of dislocation network • W is the broken bond energy

  6. Critical thickness

  7. The calculaton • For x=0.2, hcrit is about 200 amstrog

  8. References • Jasprit Singh, Physics of semiconductors and their heterostructures, McGraw-Hill Inc. • A. Fischer, H. Kuhne, M. Eichler, F. Hollander, and H. Richter Strain and surface phenomena in SiGe structures, Phys. Rev. B 54, 8761-8768 (1996)

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