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Design and Implementation of VLSI Systems (EN1600) lecture09. Prof. Sherief Reda Division of Engineering, Brown University Spring 2008. [sources: Weste/Addison Wesley – Rabaey/Pearson]. Summary of transistor operation. NMOS transistor. PMOS transistor. DC transfer characteristics.
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Design and Implementation of VLSI Systems (EN1600) lecture09 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison Wesley – Rabaey/Pearson]
Summary of transistor operation NMOS transistor PMOS transistor
Vin = 0 PMOS on (linear), NMOS off
PMOS on (linear), NMOS on (saturation) • Vin = 0.2VDD
PMOS on (linear ~ sat) and NMOS (sat) • Vin = 0.4VDD
Vin = 0.6VDD PMOS on (sat) NMOS on (linear)
Vin = 0.8VDD PMOS on (off ~ linear) and NMOS on (linear)
Vin = VDD NMOS on (linear) and PMOS cut off
Summary of voltage transfer function A B C E D
desired regions of operation CMOS inverter noise margins
V V V in3 in3 in3 V in V out What is the impact of altering the PMOS width in comparison to the NMOS width on the DC char? I , | I | dsn dsp V in3 V V DD out If we increase (decrease) the width of PMOS compared to NMOS for the same input voltage, a higher (lower) output voltage is obtained
Impact of skewing transistor sizes on inverter noise margins • Increasing (decreasing) PMOS width to NMOS width increases (decreases) the low noise margin and decreases (increases) the high noise margin
Pass transistor DC characteristics • As the source can rise to within a threshold voltage of the gate, the output of several transistors in series is no more degraded than that of a single transistor
Summary • Ideal transistor characteristics • Non-ideal transistor characteristics • Inverter DC transfer characteristics • Simulation with SPICE and integration with L-Edit