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Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke

Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke. ExCITe/More Moore Meeting May 12, 2005 Athens, Greece. WP 1: EUV Resist Technology Introduction. Task 1.1 Preliminary Resist Materials Characterization (1Q03 – 2Q05) Bulk litho properties („open frame“)

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Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke

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  1. Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke ExCITe/More Moore Meeting May 12, 2005 Athens, Greece

  2. WP 1: EUV Resist Technology Introduction • Task 1.1 Preliminary Resist Materials Characterization (1Q03 – 2Q05) • Bulk litho properties („open frame“) • Outgassing in vacuum and under EUV radiation • Ultra-Thin Resist thermal properties • Correlation of LER with polymer properties and diffusion • Task 1.2 EUV Resist Systems for the ≤ 45nm Nodes (1Q04 – 4Q05) • Printing capability • Assessment of resolution limitations (e.g. LER ) • Optimize resist formulation and processing • Identification of resist and process roadblocks for the 45nm node

  3. Enzo Di Fabrizio Italy: Carmelo Romeo France: Daniel Henry WP 1: EUV Resist Technology Cooperation Peter Zandbergen ** Koen van Ingen Schenau Harun Solak Kurt Ronse Wolf-Dieter Domke * Karl van Werden Jean-Yves Robic Michele Bertolo *) Work Package 1 Leader **) MEDEA+ T406 Project Leader

  4. 02 2003 2004 2005 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 M1.1.6 M1.1.2 M1.1.1 M1.1.8 M1.1.7 M1.2.4 M1.2.6 M1.2.5 M1.1.5 M1.2.2 M1.2.1 we are here now WP 1: EUV Resist Technology Status and Results Definition phase Definition phase Basic materials characterization Resist formulation & characterization report on resist and process limitations resist screening status report Open frame characterization Patterning Characterization, Screening Hardmask, process characterization M1.2.3 master milestones Resist & process roadblocks for 45nm node identified

  5. WP 1: EUV Resist Technology Highlights (as presented at Oberkochen Review) • 9 out of 12 milestones done. • Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions. • Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology. • MET and Interference Exposures worldwide successfully started. Resolution is limitedby the resists, no longer by the tools. • Workshops on Resist Limitations initiated • Status of EUV resist processing issues for 45nm node identified and reported. • EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.

  6. 40nm in CA-resist PMMA (non-CA resist) imaging at PSI 17.5nm L/S 15nm L/S 35nm contacts Best resolution obtained with optical lithography so far Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki)

  7. F=-200nm -150 -100 -50 0 +50 +100 50 nm L/S: 300nm DoF at E= 17.85mJ/cm2 WP 1: EUV Resist Technology ALS/MET evaluation ongoing • ExCITe exposures at ALS/MET: resist screening, flare, & process experiments Flare has a dramatic impact on LER 35nm L/S in MET-2D, left: dark field mask, right: bright field mask • process window evaluation

  8. WP 1: EUV Resist Technology Outgassing Evaluation Online MS and proofplate method installed at Leti; first EUV resist outgassing results available ESCAP (UV5) MS spectrum

  9. WP 1: EUV Resist Technology Outgassing Evaluation Polymers with high tendency to chain scissioning show the most outgassing acrylic model resists show more chain scissioning in EUV compared to even 157nm. Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists. ESCAP resist shows dose-dependent scissioning / crosslinking behavior Only DUV resist platform fulfill ASMLs outgassing specs for a-tool Quantitation of total outgassing [molecules/cm2 sec]

  10. Reticle Lens Point Spread Function (PSF) Sensor, Resist WP 1: EUV Resist Technology Line Edge Roughness & Diffusion Method of diffused point-spread function developed and used for determination of resist diffusion limitations Diffusion Length (nm) Diffusion lengths are correlated to LER

  11. WP 1: EUV Resist Technology Future Outlook (as presented at Oberkochen Review) • Resist Characterisation: BEL debugging is still ongoing (M1.2.1-2) • Open Frame Characterization is finished (M1.1.5 & M1.1.7); Emphasis of Patterning experiments is resist screening, flare impact and processing issues (bake, diffusion, LER, ..) (M1.2.3-5) • Resist & Process specs will be constantly updated during IEUVI Working Group Interactions (M1.2.3-5) • Resist Outgassing experiments will be continued by the ExCITe partners. Standardization of Outgassing protocols will be driven through interaction MEDEA / IEUVI / Sematech • European Workshop on Resist Limitations will be continued (MEDEA ExCITe / More Moore (organizing)) and will be used to drive international activities on: • Understanding and Optimization of Photospeed, Line Edge Roughness and Shot Noise • Understanding of the Resolution Limits of Chemically Amplified Resists • Understanding, what is a safe level of Resist Outgassing?

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