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Indigenous development of SiPM at BARC using CMOS technology

Indigenous development of SiPM at BARC using CMOS technology. Anita Topkar BARC. Participation in CMS Upgrade. Meeting at BARC: Visions for future collaboration’ held during February 28-March 01, 2011 Explored the possibility of participation in CMS tracker upgrade: R&D at CERN.

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Indigenous development of SiPM at BARC using CMOS technology

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  1. Indigenous development of SiPM at BARC using CMOS technology Anita Topkar BARC

  2. Participation in CMS Upgrade • Meeting at BARC: Visions for future collaboration’ held during February 28-March 01, 2011 • Explored the possibility of participation in CMS tracker upgrade: R&D at CERN

  3. Tracker upgrade • Pixels: No R&D,additional layers, timescale is short • Tracker – Microstrip R&D at CERN Need prototypes on 6” wafers by 2013 • Tracker R&D is in line with physics research interest of BARC BEL can not produce 6” wafer sensors, Other possibilities are being explored.

  4. SiPM Development • Technology development initiated at BARC about 2 ½ years back to develop indigenous fabrication capability • Several applications at BARC involving radiation monitoring and physics experiments • Also required for international collaborations in which BARC is participating e.g. FAIR

  5. Fabrication technology • Fabrication using a 6” CMOS processing line • Minimum feature size is 1m – Essential for high geometric efficiency and high dynamic range • Mask with different types of SiPMs and test structures was designed at BARC • Includes devices with geometries of 15 m x15 m pixels to 50 m x50 m pixels, areas 1.5mmx1.5mm and 2.5mmx2.5mm • Test setups for DC characterization is developed. • Setup for dynamic characterization is being developed, will be ready in a month Total expenditure ~ 40.0 lakhs, 60% spent

  6. SiPM fabrication Two batches of SiPMs have been fabricated, a few prototypes packaged & electrically tested Fabricated wafer Packaged prototypes

  7. Performance of first batch • Breakdown voltages OK (60-70V) • Reverse characteristics OK • Low reverse leakage: Performance comparable to Hamamatsu • Poly resistor - more than one order higher than Hamamatsu

  8. Electrical performance: First batch

  9. Performance of second batch • Testing at wafer level done • Electrical performance OK • Poly resistors are ok and in the required range SiPMs from this lot will be packaged and tested for dynamic performance

  10. Participation in the CMS upgrade • SiPM could be fabricated in India for the CMS upgrade • Subsequent to technology development using the present design, SiPMs could be fabricated for the specifications required for CMS • Number of groups could collaborate to work on various aspects: Characterization, readout, assembly, radiation hardness, etc.,. • Groups from IITB and SINP could be possible collaborators

  11. Thank you

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