Microelectronics and Quantum Electronics

Dec 06, 2012

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Microelectronics and Quantum Electronics

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RF Microelectronics

RF Microelectronics. RFIC Professor : Dr. Ali Fotowat Ahmady Date: July 16, 2007 Lectures: 1-10 (sections 1-5). Contents. Introduction Basic concepts Digital modulation, Spectral control, Detection Multiple access standards, TDM, CDM, OFDM TRx architecture

2.07k views • 106 slides

Microelectronics 2

Electrical Engineering 2. Lecture 4. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). ELECTRICAL ENGINEERING 2 Microelectronics 2 Dr. P.J.S. Ewen. LECTURES: Mondays 12.10-13.00 Swann 7.20 Fridays 10.00-10.50 JCMB 5327. TUTORIALS: Mondays 11.10-12.00 Eng. CR 4

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Microelectronics 2

Electrical Engineering 2. Lecture 19. Microelectronics 2 . Dr. Peter Ewen. (Room G08, SMC; email - pjse). I E. I C. e c. Fig. 117: Output Characteristics – CB Configuration. V BE. b. I C (V CB ). V CB. I B. I C / mA. Active region I C ≈ α I E , α ≈ 1. I E = 1.0 mA. 1

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Semiconductor Devices and Microelectronics

Semiconductor Devices and Microelectronics. A subtopic of Basic Electronics. First Electronic Devices Contain several hundred vacuum tubes occupying one large room Vacuum tubes consume several thousand watts of electrical power. Semiconductors/ Transistors Occupies a small side table

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Microelectronics 2

Electrical Engineering 2. Lecture 3. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). ELECTRON ENERGY - THE ELECTRON-VOLT (eV) THE ENERGY ACQUIRED BY AN ELECTRON IN PASSING THROUGH A POTENTIAL DIFFERENCE OF 1V  E = q  V  1eV = 1.6 x 10 -19 J. METALLIC BONDING

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Microelectronics 2

Electrical Engineering 2. Lecture 6. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). MOBILITY. The MOBILITY ,  , is a measure of the ease with which an electron can move through the solid.

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Microelectronics 2

Electrical Engineering 2. Lecture 10. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). Metal plate (cathode pin). Fig. 47. (Discrete) Diode Fabrication. Al wire to anode pin. Gas of boron atoms. SiO 2. p-type. p-type. p-type. ~500 m. n-type . Aluminium.

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Microelectronics 2

Electrical Engineering 2. Lecture 11. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). Diode resistance. Static resistance:. Dynamic resistance:. I / mA. 5 4 3 2 1. V. Δ I. I. Δ V. I s. V / volts. 0.8. 0.4 . -1 -2 -3 -4 -5.

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Quantum wells en modern electronics

Quantum wells en modern electronics. Annalisa Fasolino Theoretische Fysica, Nijmegen. Here you find the slides of the talk given October 24th in Nijmegen. If you wish you can find more information and addresses of many useful internet sites in the slides of my lectures for the course

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Microelectronics 2

Electrical Engineering 2. Lecture 9. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). Epitaxial growth. Fig. 40. Wafers. 1000 °C. Fig. 42. Diffusion. N D > N A – n-type N A > N D – p-type. N A >N D. N D >N A. N A =N D.

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Microelectronics 2

Electrical Engineering 2. Lecture 8. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). DIFFUSION CURRENTS. Diffusion is the process whereby particles redistribute themselves to even out concentration differences:. Water. Dye. FICK’S 1 st LAW. e.g. for electrons:

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Microelectronics 2

Electrical Engineering 2. Lecture 13. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). The Abrupt Junction. Diffusion. Implantation. Abrupt junction model. N A. Dopant concentration N A or N D. Dopant concentration N A or N D. p n. p n. x j.

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Microelectronics 2

Electrical Engineering 2. Lecture 17. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). SMALL SIGNAL MODEL FOR FET’s. h 11. i 1. i 2. + -. h 12 v 2. h 21 i 1. v 1. v 2. 1/h 22. Fig. 104: Hybrid (or h-parameter) small signal equivalent circuit for a transistor.

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Microelectronics 2

Electrical Engineering 2. Lecture 18. Microelectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). base. base. emitter collector. emitter collector. n p n. p n p. The Bipolar Junction Transistor (BJT).

558 views • 36 slides

Electronics, microelectronics, nanoelectronics, … Part II

Electronics, microelectronics, nanoelectronics, … Part II. Mizsei , János www.eet.bme.hu. Outline. nanoscale effects 3-2-1-0 dimensions atomic scales : different transport mechanisms ( thermal , electrical , mechanical ) technology at nanoscale lithography by nanoballs nanoimprint

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ST MICROELECTRONICS

Fast, efficient and scalable multi-corner SoC Signoff analysis extension with programmable in-situ Spice level analysis capability. ST MICROELECTRONICS.

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Electronics, microelectronics, nanoelectronics, … Part III

Electronics, microelectronics, nanoelectronics, … Part III. Mizsei , János www.eet.bme.hu. Outline. the MIT effect MIT resistor as memristor new thermal-electric device ( phonsistor ) and the ( CMOS compatible ) thermal-electric logic circuit (TELC) nanosized CMOS versus TELC

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Progress Report: Tools for Quantum Information Processing in Microelectronics

Progress Report: Tools for Quantum Information Processing in Microelectronics ARO MURI (Rochester-Stanford-Harvard-Rutgers) Third Year Review, Harvard University, February 25-26, 2001 C. M. Marcus, Harvard University http://marcuslab.harvard.edu

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Applied Quantum Electronics

Applied Quantum Electronics. TEA (ThermoElectric Avalance). Heikki Seppä and Panu Helistö. Technical Research Centre of Finland, Sensors/Quantronics. Motivation - Proactive Inventions and Innovations. Facts. Virtual needs. Real needs. Future real needs. Visions and imagination.

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Electronics and Software for Quantum Astronomy Progress Report

Quantum Astronomy Meeting in Bled. Electronics and Software for Quantum Astronomy Progress Report. Tommaso Occhipinti , Claudia Facchinetti, Andrea Dipaola, Paolo Zoccarato, Ivan Capraro, Sergio Billotta, Massimiliano

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QUANTUM INFORMATION: FUTURE OF MICROELECTRONICS? PAWEL HAWRYLAK QUANTUM THEORY GROUP

QUANTUM INFORMATION: FUTURE OF MICROELECTRONICS? PAWEL HAWRYLAK QUANTUM THEORY GROUP INSTITUTE FOR MICROSTRUCTURAL SCIENCES NATIONAL RESEARCH COUNCIL OF CANADA OTTAWA, K1AOR6,CANADA CANADIAN INSTITUTE FOR ADVANCED RESEARCH NANOELECTRONICS AND PHOTONICS PROGRAMME. WHY QUANTUM INFORMATION:

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WP microelectronics and interconnections

WP microelectronics and interconnections. Goal : provide chips and interconnections to the other WPs Task 1 : 65 nm chips for trackers ( CERN?) Fine pitch, low power, advanced digital processing Taks 2 : SiGe 180nm for calorimeters / gaseous (IN2p3)

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