Ge Semiconductor Devices for Cryogenic Power Electronics - II
Ge Semiconductor Devices for Cryogenic Power Electronics - II. WOLTE 5. Grenoble, June 2002. R. R. Ward, W. J. Dawson, R. K. Kirschman GPD Optoelectronics Corp., Salem, New Hampshire O. Mueller LTE–Low Temperature Electronics, Ballston Lake, New York
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