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Detectors (UV-Vis) 1. Phototube 2. Photomultiplier Tube (PMT) 3. Si Photodiode 4. Photodiode Array (PDA) 5. Charge

Detectors (UV-Vis) 1. Phototube 2. Photomultiplier Tube (PMT) 3. Si Photodiode 4. Photodiode Array (PDA) 5. Charge Coupled Device (CCD) 6. Charge Injection Device (CID). 200 – 1000 nm 1-10 ns response time 0.01 A/W. 1. Phototube. 110 – 1000 nm 1-10 ns response time 10,000 A/W.

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Detectors (UV-Vis) 1. Phototube 2. Photomultiplier Tube (PMT) 3. Si Photodiode 4. Photodiode Array (PDA) 5. Charge

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  1. Detectors (UV-Vis) 1. Phototube 2. Photomultiplier Tube (PMT) 3. Si Photodiode 4. Photodiode Array (PDA) 5. Charge Coupled Device (CCD) 6. Charge Injection Device (CID)

  2. 200 – 1000 nm 1-10 ns response time 0.01 A/W 1. Phototube

  3. 110 – 1000 nm 1-10 ns response time 10,000 A/W 2. Photomultiplier Tube (PMT)

  4. 2. Photomultiplier Tube (PMT)

  5. Si: 3s23p2 Covalent Bonds in Solid Therefore 1/2–filled sp3 ΔE ≤ 2.5 eV (semiconductor) 3. Si Photodiode 4 electrons fill a valence band at 0K At higher T an electron can move to conduction band Leaving a positive hole behind (both are mobile)

  6. Doping Si with a group 5 element (As or Sb) results in extra electrons (n-type). Doping with a group 3 element (In, Ga) results in extra holes (p-type) 3. Si Photodiode

  7. 3. Si Photodiode

  8. 3. Si Photodiode Forward bias (not very useful for spectroscopy)

  9. Reversed Bias: Depletion zone at the junction. Photons may eject electrons and form holes Current proportional to number of photons 3. Si Photodiode

  10. 200 – 1000 nm 1-10 ns response time 0.05 A/W 3. Si Photodiode

  11. 4. Linear Photodiode Array 200 – 1000 nm 1-10 ns response time 0.05 A/W

  12. 4. Linear Photodiode Array

  13. 200 – 950 nm 1-10 ns response time 0.05 - 1000 A/W 5. Charge Coupled Device (CCD)

  14. 5. Charge Coupled Device

  15. 6. Charge Injection Device (CID)

  16. Detector Responsivity R(λ) = Current Output (A) Incident Power (W) Gain of the Signal Modifier G = Output Potential (V) Input Current (A)

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