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MODERN WP2 Meeting Crolles, 2009 June 22

MODERN WP2 Meeting Crolles, 2009 June 22. T2.4 Review (AMS, IMEP, UNET, TUW, UNCA, UNGL). T2.4 Task (1/2). Task T2.4: Correlation between PV and reliability, reliability modeling

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MODERN WP2 Meeting Crolles, 2009 June 22

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  1. MODERN WP2 MeetingCrolles, 2009 June 22 T2.4 Review (AMS, IMEP, UNET, TUW, UNCA, UNGL) Project Review Meeting Crolles, June 22, 2009

  2. T2.4 Task (1/2) • Task T2.4: Correlation between PV and reliability, reliability modeling • The impact of process variability on existing device reliability degradation models will be clarified. Aging measure-ments will be performed on test structures: Device degradation mechanisms will be identified based on silicon, their effect on PV parameters will be characterized and modeled to allow for a better description of aging during operation. • Partners: AMS, IMEP, UNET, TUW, UNCA, UNGL • UNGL will develop methodologies for the simulation of the statistical impact of NBTI and hot carrier degradation on the MOSFET characteristics in concert with the statistical variability sources described in T2.2 and its capture in statistical compact models. UNCA will perform aging measurements on nano-MOSFET devices focusing on the three main reliability mechanisms: hot-carrier injection, bias-temperature instability and time-dependent dielectric breakdown. The impact of process variation (e.g. line edge roughness, random dopant distribution, non-homogenity of the gate dielectric) on the device reliability will be investigated and potential solutions will be proposed. Aging models will be developed to predict device lifetime dependence on the statistical fluctuations of geometrical and technological parameters of nano-MOSFET. Model parameters will be calibrated with the hardware results of aging measurements. UNET will work on methodologies to design reliability experiments that allow characterizing the impact of PV on test structures, single cells or simple arrays, on 45nm & 32nm planar CMOS, and on Non-Volatile Memories. It will include the development of compact models including aging effects. AMS will execute lifetime measurements necessary for model development and the usage in SPICE simulators in 0.13um, 0.18um and 0.35um CMOS and HV technologies. The objective is to develop silicon based models for PV and reliability correlation. Lifetime measurements will be performed on appropriate test structures. Based on that data set, PV-aware parameter degradation models for NBTI and HCI effects will be developed at TUW. Since in particular degradation caused by NBTI is known to recover quickly once the stress is removed, emphasis will be put on a proper description of the dynamical properties of the degradation. Project Review Meeting Crolles, June 22, 2009

  3. T2.4 Task (2/2) • Task T2.4: Correlation between PV and reliability, reliability modeling (cont’) • With future technology nodes it is becoming more and more critical to consider statistical and deterministic variations for ensuring the design goal at time of manufacturing as well as for the proposed lifetime. IMEP will investigate based on mixed mode TCAD simulation and on analytical models the SBD/BD failure occurrence impact at device level on device characteristics and at elementary circuit level on subsequent circuit functioning. These studies will be extended to new device architecture featuring thin silicon film (MugFET, GAA), which will be benchmarked in term of reliability robustness to bulk devices. This will require a detailed analysis of the SBD/BD occurrence and characterization on actual FD-SOI or GAA devices. The work will be carried out in collaboration with STF2. Project Review Meeting Crolles, June 22, 2009

  4. Reliability: T2.4 Deliverables Task Leader: Jong-mun.park@austriamicrosystems.com  Project Review Meeting Crolles, June 22, 2009

  5. T2.4 Task List • AMS: Lifetime measurements necessary for model development 0.18um and 0.35um CMOS and HV technologies. • IMEP: Lhe impact of process variability on existing device reliability degradation models will be clarified. Aging measure-ments will be performed on test structures: Device degradation mechanisms will be identified based on silicon, their effect on PV parameters will be characterized and modeled to allow for a better description of aging during operation. • Partners: AMS, IMEP, UNET, TUW, UNCA, UNGL • UNGL will develop methodologies for the simulation of the statistical impact of NBTI and hot carrier degradation on the MOSFET characteristics in concert with the statistical variability sources described in T2.2 and its capture in statistical compact models. UNCA will perform aging measurements on nano-MOSFET devices focusing on the three main reliability mechanisms: hot-carrier injection, bias-temperature instability and time-dependent dielectric breakdown. The impact of process variation (e.g. line edge roughness, random dopant distribution, non-homogenity of the gate dielectric) on the device reliability will be investigated and potential solutions will be proposed. Aging models will be developed to predict device lifetime dependence on the statistical fluctuations of geometrical and technological parameters of nano-MOSFET. Model parameters will be calibrated with the hardware results of aging measurements. UNET will work on methodologies to design reliability experiments that allow characterizing the impact of PV on test structures, single cells or simple arrays, on 45nm & 32nm planar CMOS, and on Non-Volatile Memories. It will include the development of compact models including aging effects. AMS will execute lifetime measurements necessary for model development and the usage in SPICE simulators in 0.13um, 0.18um and 0.35um CMOS and HV technologies. The objective is to develop silicon based models for PV and reliability correlation. Lifetime measurements will be performed on appropriate test structures. Based on that data set, PV-aware parameter degradation models for NBTI and HCI effects will be developed at TUW. Since in particular degradation caused by NBTI is known to recover quickly once the stress is removed, emphasis will be put on a proper description of the dynamical properties of the degradation. Project Review Meeting Crolles, June 22, 2009

  6. T2.4 Review (2/1)(AMS, IMEP, UNET, TUW, UNCA, UNGL) • Activity done so far • Collect experimental data in order to develop a physically based degradation model for HCI and NBTI • LV MOS first, HV MOS final goal (AMS, back-up slides) • Measurement done on ‘golden wafers’ ( PV is neglected, AMS) • The initial NBTI results from the model are validated against the numerical results (TUW, back-up slides). • Well established methodology for simulation of statistical aspects of NBTI (UGLA, back-up slides) • Survey of requirements for statistical reliability simulation (UGLA) • UNCA: Needs samples from industrial partners. Collaboration with ST-I • IMEP: Collaboration with STF2 • UNET: Collaboration with STF2 • Plan for D2.4.1 deliverable • Discuss with T2.5 the most interesting devices for the demonstrator, with T2.1 the process parameters to take into account. • Initial physics-based analytical model for NBTI to implement in circuit simulator • Survey of degradation effects TUW, UGLA • Time dependent modeling of degradation TUW • Statistical modeling of degradation UGLA Project Review Meeting Crolles, June 22, 2009

  7. T2.4 Review (2/2)(AMS, IMEP, UNET, TUW, UNCA, UNGL) • Issues • Near term (for D2.4.1 deliverable): none • Mean term: • How to measure PV influence on reliability? • How to include PV in a reliability model? • Experimental results which captures the dynamics like recovery, bias dependence of recovery, etc. to validate the models • Find a correlation between parameters related to reliability and process variability. • Interaction need with other WP, if any • Statistical simulation of variability and reliability are connected • Simulated and measured devices are identical! Project Review Meeting Crolles, June 22, 2009

  8. T2.4 Back-up slides Project Review Meeting Crolles, June 22, 2009

  9. Devices (AMS) H35- NMOSIM (LV) H35- NMOS50M (HV) Project Review Meeting Crolles, June 22, 2009

  10. Current HCI model (AMS): Modified Hu model HV LV T=-40 C Project Review Meeting Crolles, June 22, 2009

  11. Well established methodology for simulation of statistical aspects of NBTI (UNGL) Project Review Meeting Crolles, June 22, 2009

  12. Well established methodology for simulation of statistical aspects of NBTI (UNGL) Project Review Meeting Crolles, June 22, 2009

  13. Analytical Model for NBTI (TUW) Project Review Meeting Crolles, June 22, 2009

  14. Validation of the Model (TUW) Project Review Meeting Crolles, June 22, 2009

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