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WP2 Review Meeting Milan, October 05, 2011

MODERN ENIAC WP2 Meeting (WP2-T2.1). WP2 and Tasks review Milano Agrate, 2011 Oct. 05 Meeting hosted by Micron. WP2 Review Meeting Milan, October 05, 2011. WP2: Relationship among work packages. WP2 Review Meeting Milan, October 05, 2011. 1. T2.1 Task.

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WP2 Review Meeting Milan, October 05, 2011

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  1. MODERN ENIAC WP2 Meeting (WP2-T2.1) WP2 and Tasks review Milano Agrate, 2011 Oct. 05 Meeting hosted by Micron WP2 Review Meeting Milan, October 05, 2011

  2. WP2: Relationship among work packages WP2 Review Meeting Milan, October 05, 2011 1

  3. T2.1 Task Task T2.1: PV-aware process simulation Process simulation tools will be extended to include the impact of variations in TCAD simulations especially in etching and deposition processes; an interface to commercial process and device simulation programs will be developed. Process simulations for the extraction of behavioral models will be performed. In addition it is intended to build up an interface between the process simulation environment and the semiconductor FAB to obtain equipment parameters which affect variability. Partners: ST-I, AMS, TUW In the analysis and modelling of PV ST-I wants to link process information out of the silicon manufacturing facility into TCAD environment in order to take into account inevitable process variations and doping fluctuations with the objectives to create a behavioural model of the process to be simulated and to perform statistical process analysis and process optimization to improve parametric yield. AMS and TUW will focus on TCAD process simulation to reflect major sources for PV in 0.35um, 0.18um and 0.13um CMOS and HV technologies; main inline/equipment parameters will be taken into account. TCAD based statements about pros and cons of emerging device options will be given concerning variability. The methodology will be compared to the one used in task 2.2. WP2 Review Meeting Milan, October 05, 2011

  4. Process simulation: T2.1 Deliverables Partners: ST-I, AMS, TUW Task 2.1 goal is to perform process simulation including treatment of PV. Application for discrete power devices, SiC, AlGaN/GaN (ST-I) and HV-CMOS technologies (AMS) Task Leader: valeria.cinnera@st.com WP2 Review Meeting Milan, October 05, 2011

  5. Activity done so far: Interface between commercial process simulator and fab equipments: a web – based tool has been realized. The tool accepts in input the product code used in manufacturing and produces in output the process parameters that can be passed to the TCAD software tools (Silvaco or Synopsys syntax) (Implementation activity is included in WP5) Process simulator setup & calibration Process simulation with Synopsys platform has been performed. Screening parameters: first device simulations have been executed in order to select the process parameters that mainly affect the electrical behavior of the device: Design of Experiment has been arranged to build structures with a systematic variation of the selected process parameters. The activity done on a Silicon Power MOS (D2.1.1) has been extended to compound materials (SiC and AlGaN/GaN devices) (D2.1.2) PCM extraction: polynomials function of process parameters have been extracted (T2.2) PCM validation: As a check for the robustness of the PCM, a new set of simulation data, choosing a random combination of input parameters, have been generated and compared with the prediction given by the PCM (T2.2) Interactions T2.1 DOE results  T2.2 for device simulation and PCM extraction. T2.1 Review Summary (ST-I) WP2 Review Meeting Milan, October 05, 2011

  6. Activity done so far, with highlights on technical results, and dissemination HV-CMOS technologies (AMS, TUW): Statistical fab data analysis (FEOL, BEOL): 0.35µm HV-CMOS Tech.  done HV devices for DOE: NMOSI20T and PMOS20T Process simulator setup & calibration  done Critical PV selection: 6 ~ 8 variables (substrate resistivity, implant dose, CD & overlay, GOX thickness, …)  done PMOS20T process simulations with 7 PV variables  done (see Back-up slides) 286 (W/L=10/0.6, 10/10) structures from process simulations go to Minimos-NT for device simulation. Device simulations for statistical spice modeling: done (PMOS20T) Script development for electrical parameter extraction  inline measurement D2.1.2 deliverable: Done An interface between commercial process simulator and Minimos-NT (a two-dimensional device simulator from TUW) Complete set of NMOS20T and PMOS20T process and device simulations  done Script update for electrical parameter extraction NMOS20T and PMOS20T sensitivity analysis with 7~8 process variations: done Issues Interaction need: T2.1 results (HV-CMOS)  T2.3 for Spice Monte-Carlo Model (D2.3.3) T2.1 Review Summary (AMS, TUW) WP2 Review Meeting Milan, October 05, 2011

  7. T2.1 Back-up slides for ST-I WP2 Review Meeting Milan, October 05, 2011

  8. Process recipes Process flow Virtual device High Level factory Specific process conditions TCAD Experiments Mask Layout FAB1 PCM PCM Process Compact model derived from TCAD Technology transferred to FAB2 using PCM FAB2 ST-I WP2 Activity WP2 Review Meeting Milan, October 05, 2011

  9. WEB-Based Interface: High-level factory WP2 Review Meeting Milan, October 05, 2011

  10. T2.1 Process compact modeling approach incorporates statistical design of experiment methods within the calibrated TCAD environment allowing to capture relationships between process variations and device performance through a set of analytic functions (Response Surface Method). Process Compact Model Input process parameters Output device characteristics New process conditions Predicted device response Process Compact Model The flow of PCM extraction from TCAD simulation consists of the following steps: - Definition of a calibrated TCAD flow (process and device); - Analysis of process parameter sensitivity (parameter screening); - Simulations of process splits and electrical variables extraction (design of experiment); - PCM generation. WP2 Review Meeting Milan, October 05, 2011 9

  11. Application to Power-Mos cell (D2.1.1) PCM STUDIO EHD5 SEMICELL • Applied methodology flow. • Synopsys platform: • Sentaurus and PCM Studio • Simulation of Power-Mos semi cell with the nominal values of the process input parameters SENTAURUS WORKBENCH DOE PCM • Parameter screening to identify the process parameters that • have an important impact on target electrical parameters. • Parameterized simulation setup (DOE) generating several simulation runs. • Device simulations of breakdown and I-V characteristic for each experiment. WP2 Review Meeting Milan, October 05, 2011 10

  12. Process variability Input process parameters that have influence on the device behavior. Output electrical parameters: RDSon and BV Sensitivity index for process parameter variation A large number of process variables requires a very high computational cost. Selecting only those process parameters showing the greatest impact on electrical performances. WP2 Review Meeting Milan, October 05, 2011 11

  13. Design of experiments • The DOE depends on the degree of the polynomial required for a good data fit. • The output electrical parameter is a non-linear function of the input process parameters, modeled by a second order polynomial. • To fit a second-order model, a DOE with at least three levels is required: 81 experiments are generated. For each structure, device simulations are performed to extract Ron and BV. WP2 Review Meeting Milan, October 05, 2011 12

  14. Application to 4H-SiC JBS diode (D2.1.2) Calibration of TCAD simulations Forward and reverse characteristics comparison between measure and simulation. WP2 Review Meeting Milan, October 05, 2011 13

  15. Process variability and DOE setup Parameters screening DOE setup in SWB Input process parameters that have influence on the device behavior: -FW6 (anode voltage @6A) -FW80 (anode voltage @80A) -BV (breakdown Voltage) -LK600 (leakage current @600V) WP2 Review Meeting Milan, October 05, 2011 14

  16. Application to AlGaN/GaN HEMTs (D2.1.2) Schematic cross-section of the AlGaN/GaN HEMT under examination Input process parameters that have influence on the device behavior: - Id_MAX (maximum drain current value at Vg=2V) - Vth (threshold voltage) - gm (maximum of transconductance for a given Id–Vg) WP2 Review Meeting Milan, October 05, 2011 15

  17. Processvariability and DOE setup Sensitivity analysis Experiments generated by DoE WP2 Review Meeting Milan, October 05, 2011 16

  18. Conclusions • In D2.1.2 the methodology used to increase TCAD simulation efficiency, by deriving Process Compact Models from systematic well-calibrated simulations, is described. • In order to demonstrate the general concepts of how to use the PCM approach, a 4H-SiC JBS diode and an AlGaN/GaN HEMT device have been investigated. The Synopsys platform (Sentaurus and PCM Studio) has been used. • First the standard cell of the device under examination has been simulated with the nominal values of the process input parameters. Second the process parameters that have an important impact on target electrical parameters have been identified performing a parameter screening. Then, a parameterized simulation setup has been arranged. • To complete the analysis, device simulations have been performed, for each experiment. Moreover post-processing scripts need to be introduced to automatically extract the list of electrical outputs. In this way the RSM model of device characteristics as function of process parameters will be generated by using PCM Studio. Details on this work has been included on D2.2.4. WP2 Review Meeting Milan, October 05, 2011

  19. T2.1 Back-up slides for AMS and TUW WP2 Review Meeting Milan, October 05, 2011

  20. Process Variation • Input Parameters (HV-PMOS) - 143 (7 PV for HV-PMOS) and 272 (8 PV for HV-NMOS) Full Process and Device Simulations WP2 Review Meeting Milan, October 05, 2011

  21. Process Variation • Variation Setup (RSM) WP2 Review Meeting Milan, October 05, 2011

  22. Process Variation • TCAD Flow Parameters Correlation Interface between commercial Synopsys Process Simulator and Minimos Device Simulator Sentaurus Work Bench Parameter Extraction Minimos WP2 Review Meeting Milan, October 05, 2011

  23. Process Variation • Minimos Device Simulation • Linked to commercial Synopsys Process Tools • Input from .grd and .dat output of Sentaurus Device • Geometry output of Minimos to .grd and .dat • Characteristics to .crv • Parameter Extraction • Inhouse Measurement Methods at AMS • extract BSIM Parameters from Simulation • Ron, Vth, Idsat, Sleak, Gamma, Leff WP2 Review Meeting Milan, October 05, 2011

  24. Process Variation • Parameter Extraction • Original Matlab Methods at AMS • Rewritten to extract Parameters from Minimos • In Python with SciPy and Numpy • Nearly identical Syntax as in Matlab WP2 Review Meeting Milan, October 05, 2011

  25. Process Variation • Vth Extraction WP2 Review Meeting Milan, October 05, 2011

  26. Process Variation • Extracted Data WP2 Review Meeting Milan, October 05, 2011

  27. Process Variation • Output Parameters <Gamma,Sleak>(SNOverlay) WP2 Review Meeting Milan, October 05, 2011

  28. Status of PV-aware Process & Device Simulations • Status • Electrical parameter extraction (for Monte Carlo spice model) : done • (Vth_lin, Vth_sat, Idlin, Idsat, Ron, Sleak, Gamma, Leff, …) • D2.3.3 • *Remarks: HV-PMOS = PMOS20T, HV-NMOS=NMOSI20T WP2 Review Meeting Milan, October 05, 2011

  29. Quadratic fitting from the simulation results • - H35 technology (0.35 µm HV-CMOS process) • - PMOS20T: 143 structures (7 PV) • - NMOSI20T: 272 structures (8 PV) •  TCAD Process & device simulations (sprocess & Minimos-NT) • Quadratic fitting (all PV versus electrical data) • Random 10000 PV-set generation by considering inline PV distributions • Electrical parameter calculation from the quadratic formula • Data analysis WP2 Review Meeting Milan, October 05, 2011

  30. PMOS20T(20/0.6): Ron and Ron-fit WP2 Review Meeting Milan, October 05, 2011

  31. PMOS20T(20/0.6): Vthlin and Vthlin-fit WP2 Review Meeting Milan, October 05, 2011

  32. PMOS20T(20/0.6): Ron and Vthlin correlation WP2 Review Meeting Milan, October 05, 2011

  33. PMOS20T(20/0.6): 7 PV distributions (10000 random values) WP2 Review Meeting Milan, October 05, 2011

  34. PMOS20T(20/0.6): Ron and Vthlin distribution WP2 Review Meeting Milan, October 05, 2011

  35. PMOS20T(20/0.6) & NMOSI20T(20/0.7): Ron versus Vtlin WP2 Review Meeting Milan, October 05, 2011

  36. Conclusions • Statistical fab data analysis (FEOL, BEOL) for 0.35µm HV-CMOS Techhnology was done for PV TCAD simulations. • TCAD environment construction: • - Process simulator setup & calibration • - Critical 7~8 PV selection • - Interface development between commercial process simulator and Minimos-NT (a two-dimensional device simulator from TUW) • - Script development for electrical parameter extraction • TCAD simulations: • - A set of NMOS20T and PMOS20T process and device simulations • - NMOS20T and PMOS20T sensitivity analysis • - Quadratic curve fitting of simulation results, Random PV generation • - PV-aware statistical electrical parameters • T2.1 results (HV-CMOS)  T2.3 for Spice Monte-Carlo Model (D2.3.3) WP2 Review Meeting Milan, October 05, 2011

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