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Interconnect Working Group. 2009 Revision 16 December 2009 Hsinchu, Taiwan Christopher Case, Chair Raymond Jao(SPIL), Jinn-P. Chu (NTUST), Hsien-Wei Chen (TSMC), and Sam Yamazaki (Sharp). Topics of 2009 Interconnect Update. Outline renewal
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Interconnect Working Group 2009 Revision 16 December 2009 Hsinchu, Taiwan Christopher Case, Chair Raymond Jao(SPIL), Jinn-P. Chu (NTUST), Hsien-Wei Chen (TSMC), and Sam Yamazaki (Sharp)
Topics of 2009 Interconnect Update • Outline renewal • Requirements from device function, and solution by process modules • Small change in bulk low-k • No change in keff • Accelerating Air-gap • Reliability improvement challenge • Metal capping for EM resistance booster. • Red brick wall decline inJmax, new material’s introducing • New 3D TSV roadmap tables • Emerging interconnect categorization for Cu extension and Cu replacement
Topics of XTWGs in Hsinchu • More Moore related issues • Very Low-k (k<2.1) with 450mm wafer • Cu contact for 2011 revision • TSV impacts for etching chemical consumption, in-situ test and metrology methods with void inside, and layout rules. • More than Moore related issues • Border for Cu Extension/Replacement and Native device interconnect with ERM.