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A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology. Wen-Lin Chen, Sheng-Fuh Chang, Guo-Wei Huang, Yuh-Sheng Jean and Ta-Hsun Yeh Microwave and Wireless Components Letters, IEEE Volume 17, Issue 10, Oct. 2007 p.p718 - 720.
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A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology Wen-Lin Chen, Sheng-Fuh Chang, Guo-Wei Huang, Yuh-Sheng Jean and Ta-Hsun Yeh Microwave and Wireless Components Letters, IEEE Volume 17, Issue 10, Oct. 2007 p.p718 - 720 Adviser : Zhi-Ming Lin Postgraduate : Chia-Wei Chang
Outline • Introduction • Circuit Design • Measurement Results • Conclusion
Introduction • With the rapid growth of wireless and mobile communications, wireless radios require effective interference and image rejection. • To rejection the image interference of wireless radio, the LNA with its followed interference-rejection (IR) BPF will be used.
Circuit Design Two common-gate stages are stacked together as a current-reused stacked common-gate topology Fig1.Schematic diagram of the proposed IR LNA
Measurement Results power gain is 10.8 dB at 15GHz The measured power gain is 10.8 dB at 15GHz NF is 2.6 dB at 15GHz The IR is 38.5dB due to a transmissionzero is generatedat 24GHz
TABLE COMPARISON OF CMOS LNAS OF THIS WORK AND REPORTED WORKS IN LITERATURE
Conclusion • A UWB CMOS LNA has been implemented in a 0.13 -μm CMOS process. • Power gain of 10.8 dB • 23.3-dB gain control range at 15 GHz • 38.5-dB rejection on interference at 24 GHz • A current-reused stacked common-gate LNA is proposed for high IR, wide gain control range, and low dc power consumption at Ku-band.
References • [1] T. K. Nguyen, N. J. Oh, C. Y. Cha, Y. H. Oh, G. J. Ihm, and S. G. Lee, “Image-rejection CMOS low noise amplifier design optimization techniques,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 538–547,Feb. 2005. • [2] M. H. Koroglu and P. E. Allen, “A 1.9 GHz image-reject front- end with automatic tuning in a 0.15 um CMOS technology,” in IEEE Int. Solid-State Circuits Conf. Tech. Dig., San Francisco, CA, Feb. 2003, pp. 264 – 265. • [3] H. Samavati, H. R. Rategh, and T. H. Lee, “A 5 GHz CMOS wireless LAN receiver front end,”IEEE J. Solid-State Circuits, vol. 35, no. 5, pp. 765–772, May 2000. • [4] J. W. M. Rogers and C. Plett, “A 5 GHz radio front-end with automatically Q-tuned notch filter and VCO,”IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1547–1554, Sep. 2003. • [5] Razavi, “A 60-GHz CMOS receiver front-end,”IEEE J. Solid-State Circuits, vol. 41, no. 1, pp. 17–22, Jan. 2006.