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半導體量測技術 Semiconductor Materials and Device Characterization

半導體量測技術 Semiconductor Materials and Device Characterization Topic 4: resistance and effective channel length in MOSFET Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Topics: R and L eff in MOSFET. Series resistance in diode

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半導體量測技術 Semiconductor Materials and Device Characterization

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  1. 半導體量測技術 Semiconductor Materials and Device Characterization Topic 4: resistance and effective channel length in MOSFET Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

  2. Topics: R and Leff in MOSFET • Series resistance in diode • Threshold voltage (Vt) and Gm Id-Vd Id-Vg (*) • Complete resistance model of MOSFET • MOSFET parameters: (ΔL, RT, μ0, θ) • Teroda method (ΔL, RT, assuming μeff is constant) • De La Moneda Method • Sucio Johnson methold • C-V method (only have ΔL, no RT)

  3. Topics: Ch. 4-9 and Ch. 6(D. K. Schroder) • Hot electron effect • Isub-Vg • LDD (lightly doped drain)structure • Transconductance (gm)and channel conductance (gd) • Chapter 6: • Interface trapped charge (Qit, Nit, Dit) • Fixed oxide charge (Qf, Nf) • Oxide trapped charge (Qot, Not) • Mobile oxide charge (Qm, Nm) • Oxide integrity (p. 389)

  4. D. K. Schroder, p. 249

  5. Hot carrier characterization: step-1 Isub,max D. K. Schroder, p. 250

  6. Step-2: D. K. Schroder, p. 249

  7. Step-3: lifetime determination D. K. Schroder, p. 249

  8. Thinking: D. K. Schroder, p. 256

  9. D. K. Schroder, p. 347

  10. D. K. Schroder, p. 348

  11. D. K. Schroder, p. 349

  12. C-V curve: oxide leakage current • Figure E6.4 (D. K. Schroder, p. 355) • Ideal CV curve • Effect of oxide leakage current on CV curve

  13. D. K. Schroder, p. 338

  14. Fixed charge: oxide/Si interface • +ve • Determined by VFB shift • Measuring VFB: calculate CFB from Eq. (6.20) and Fig. 6.7 • To eliminate or reduce the effects of all other oxide charges and interface trapped charge • VFB: n+poly/p-Si? p+poly/n-Si?

  15. Oxide trapped charge • +ve, -ve • Electrons, holes can be injected from the substrate or gate • Usually distributed through the oxide Gate: r = 0; oxide/Si interface: r = 1

  16. Homework: 4.11 (D. K. Schroder, p. 258) 4.13 (D. K. Schroder, p. 259)

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