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Weekly Group Meeting Report. Renjie Chen Supervisor: Shadi A. Dayeh. HfO 2. InGaAs. 1. Ni-InGaAs Solid - state Reaction. Previous Design. Bonding. Etch Back. Etch InP. Remaining Problems. InP. HfO 2. InGaAs. SiO 2. Membrane broken during fabrication.
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Weekly Group Meeting Report Renjie Chen Supervisor: Shadi A. Dayeh
HfO2 InGaAs 1. Ni-InGaAs Solid-stateReaction • PreviousDesign Bonding Etch Back Etch InP • RemainingProblems InP HfO2 InGaAs SiO2 Membranebrokenduringfabrication PoorHRTEMImagingduetoHfO2layer HfO2 Ni Si Aperture Frame
NewDesign Directly fabricate Fins on top Spin-coatPMMA Deposit Ni Imbedded CopperTEMgrids BondtoCarrierwafer Si InPLap&etch WithPMMA PMMArelease
CopperTEMAperture • MicroscopeimagebeforeInPetchng
2. NeuralProbes 1.PhotolithographyprocessinCINT • Innano3 UCSD, the photolithography on sapphire wafer was performed with NR7-1500 photoresist • In CINT, there’s no NR7 resist. The resist I used, AZ-5214 for image reverse, doesn’t work well for sapphire (transparent wafer) • This morning, Don helped me try the resist 5510 which gives a good resolution, however, it does not still stick to sapphire quite well. • I’ll take a look at the data sheet and some literatures to modify the 5510 process.
300’C 5min + 400’C 10min 300’C 5min + 400’C 20min 300’C 5min + 400’C 30min 2.Nickel silicide bonding test on Sapphire wafer
