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Weekly Group Meeting Report

Weekly Group Meeting Report. Renjie Chen Supervisor: Prof. Shadi A. Dayeh. Part I Literature Review. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires. Experimental Details . SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is <111>

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Weekly Group Meeting Report

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  1. Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

  2. Part I Literature Review

  3. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Experimental Details • SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is <111> • Ni pads were defined by EBL, and the TEM samples were prepared on the SiNx membrane • Annealing was done in cold-wall CVD, with Ar atmosphere and pressure of 2 x 10-4 mbar NiSi2 (111) || Si (111) NiSi2[111] || Si [111] Stress induced lowering of the diffusion coefficients Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Ogata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011,22 (36), 365305

  4. Time-Dependent Study • LNixSiyfollows a square root dependence with annealing time • LNixSiyis significantly shorter for oxidized NWs at any given time >5 min • Two type of measurements give comparable results within the experimental error Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Ogata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011,22 (36), 365305

  5. Diameter-Dependent Study • LNixSiy for these <111> orientated SiNWs increases for decreasing NW diameter, which can be fitted by an increase square root dependence. • This indicate that the Ni flux through the silicidedNW is dominated by surface diffusion. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Ogata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011,22 (36), 365305

  6. Prolonged Ni Silicidation Propagating Interface Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Ogata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011,22 (36), 365305

  7. Calculations Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires Ogata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011,22 (36), 365305

  8. Part II Experimental Report

  9. Time-dependent Anneal Study Sample 1 for 250’C Test Sample 2for 300’C Test

  10. Sample 1 for 250’C Test Sample 2for 300’C Test 30nm Fin [110] 30nm Fin [110]

  11. On the Same Sample 300 ‘C Anneal Test 4 min 6 min 8 min 10 min 15 min 20 min

  12. Time Dependent 300’C, Fin [110], width ~ 30nm Fin-width Dependent 300’C, 5min, Fin [110]

  13. RTA Profile 300’C 250’C 150’C 5 s 30 s

  14. Plan • I still have 1 sample with 10units, that could be used for the time dependent annealing study • Work on the neural probe samples once receiving them

  15. Thank youQ&A

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