Weekly Group Meeting Report

1. Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

2. Summary • For InGaAs samples: -- The time dependent annealing tests have been finished at all three temperatures (250’C, 275’C and 300’C). The diffusion length measurements are still in process -- Two batch of Ni-InGaAs devices have been finished to test the contact resistance. • For neural probe samples: -- The Si on a new batch of 6 samples have been thinned down with Atsunori and YunGoo’s help, thanks a lot for help. -- I received the samples on Monday, and the dots layer writing and metal deposition have been finished.

3. Time-sequential Diffusion Test

4. 250’C Test Fin [110] 10 min 20 min 40 min 60 min 90 min 120 min

5. 250’C Test Fin [100] 10 min 20 min 40 min 60 min 90 min 120 min

6. 275’C Test Fin [110] 3 min 6min 12min 20 min 30 min 40 min

7. 275’C Test Fin [100] 3 min 6min 12min 20 min 30 min 40 min

8. 300’C Test Fin [110] 2 min 4 min 6 min 8 min 10 min 15 min

9. 300’C Test Fin [100] 2 min 4 min 6 min 8 min 10 min 15 min

10. Ni-InGaAs Contact Resistance Test 1st batch of samples: Before electrode writing After electrode writing

11. 2st batch of samples: Non-annealed Annealed ~ 106 Ohm ~ 108 Ohm

12. Plan • Continue on the Ni-InGaAs diffusion length measurement. • Start testing the TEM sample process -- Transfer of InGaAs Fins on copper TEM grids • Prepare new set of neural probe samples according to the feedback of pillar etching