Speech

1. Speech Subject : IC Process and Technology at 45nm and beyond Speaker: Dr. TOMI T. LI Senior Director of Applied Materials, U.S.A. Time : 14:00-15:00 PM, March 14, 2007 (Wednesday) Place : Conference Room 307B, NDL Abstract : This presentation describes an overview of IC technology drivers and their processes at 45nm and beyond. The future technology driver is the cost reduction by function. Thus, the lithography and scaling are still strong IC drivers but trade-off will be the performance and power dissipation. The major power limitations are set by applications. The main components for power consumptions are active power and standby power. The solutions to the power consumption need to be from chip design and their architectures: materials and their processes. This is followed by technology roadmap challenges. These challenges include the systems and applications restriction, the key technology drivers, Lithography, Front-end of line (FEOL) processes on transistor, Back-end of the line (BEOL) processes on interconnect and the Global processes on metrology, inspection and clean.There are three waves for the future technology and business models. Three waves on the technology and business trend are 0.1um (Nano) and beyond, 300mm and new materials. All of these waves drive the business opportunities. Technology at 0.1um (Nano) and beyond drives the sub-wavelength lithography, 300mm drives the cost and new materials (HighK/Metal gate, SOI, Strain engineering) drive RC, low leakageand mobility for a high performance chip at 45nm and beyond. The gap in the transition to new wavelengths such as EUV is a big challenge due to the cost and throughput. Therefore, the extension of 193nm immersion technology is the best choice and can extend the wavelength life time. In order to advance the single wafer process and lower the cost of ownership for the productivity enhancement, the trend of product portfolios is moving from 200mm to 300mm for the future products in the advanced new Fabs. The new materials such as High K/Metal gate (FEOL) and Copper/low k (BEOL) are continue moving forward and try to meet the Moore Law. A broad product ranger including PVD, CVD, Etch, CMP, RTP, IMP, PDC will be introduced for the technology of the connected world Biographical notes : Dr. Li is a Senior Director of Applied Materials in USA currently. He has been working and holding various senior Technical, business management and product position in the past including Technology General Manager in Applied Materials China, Directors of Product groups of PVD, CVD. Director and manager of Technology, Business Development and Marketing for Asia and Globe since 1991. Prior to these positions, he worked for Digital Equipment Company as a Principal IC Process Engineer and later as a Manager for 6 years since 1984. He also worked for IBM Research Lab. as a Research Scientist in thin film area for 1 year in 1985 and as a postdoctor at Purdue University for 2.5 years since 1982. Overall, Dr.Li has more than 20 years in Semiconductor industry. He received his Ph.D. from Michigan State University in Inorganic Chemistry and Materials in 1982. He had 32 published papers.