1 / 2

IGBT vs MOSFET

IGBT and MOSFET have their unique characteristics, uses, and of course, significance in their applications. But what are the differences between both of them

Download Presentation

IGBT vs MOSFET

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. IGBT v/s MOSFET IGBT v/s MOSFET IGBT and MOSFET have their unique characteristics, uses, and of course, significance in their applications. But what are the differences between both of them? Millennium Semiconductors, one of the top distributors of IGBT IGBT power modules and SIC MOSFET, highlights a few essential differences between IGBT and MOSFET. IGBT IGBT v/ v/s MOSFET s MOSFET – – Difference Between IGBT and MOSFET Difference Between IGBT and MOSFET Description Description IGBT IGBT IGBT is a three terminal (gate, collector, emitter) full-controlled switch. Its gate/control signal happens between the gate and emitter, and the drain and emitter form its switch terminals. MOSFET MOSFET The MOSFET is also a three-terminal (gate, drain, and source) full- controlled switch. The gate/control signal happens between the gate and source, and here, it is the drain and source that constitute its switch terminals. High (Greater than 200kHz) Long duty Low (Less than 250V) Ultra-high speed(Unipolar device) Frequency Frequency Cycles Cycles Voltage Voltage Switching Time Switching Time Low (Less than 20kHz) Low duty High (Higher than 20kHz) High speed(Faster than bipolar transistors, but slower than MOSFETs) Low VCE(sat)With built-in voltage(*1) On On- -State Voltage Characteristics State Voltage Characteristics On-resistance x drain currentWithout built-in voltage(*1) High Medium Medium Voltage Positive - Battery charging Switch Switch M Mode ode P Power S Supplies (SMPS): upplies (SMPS): Hard switching above 200kHz - Switch Switch M Mode ode P Power S Supplies (SMPS): upplies (SMPS): ZVS below 1000 watts. Input Impedance Input Impedance Output Impedance Output Impedance Cost Cost Control Control Temperature Coefficient Temperature Coefficient Applications Applications High Low High GATE Negative - (UPS): (UPS): Constant load, and usually low frequency. Motor control: Motor control: Frequency <20kHz, short circuit/in- rush limit protection Low Low- -power lighting: power lighting: Low frequency (<100kHz) Welding: Welding: High average current, low frequency (<50kHz), ZVS circuitry Induction heating Switch mode power supply Traction motor control Electric cars Lamp ballasts Present only in RC-IGBTs Extreme tolerance- ower - ower - - - - - - - Parasitic Diode Parasitic Diode ESD Tolerance ESD Tolerance Present (body diode) Vulnerable toward ESD, as the high impedance technology does not

  2. allow for voltage dissipation Relatively simple - Long duty cycles - Wide line or load variations - < 500W output power - High frequency applications (>200kHz) - Low-voltage applications (<250V) Gate ( Gate (B Base) Preference Preference ase) D Drive rive C Circuit ircuit Relatively simple - Narrow or small line or load variations Low duty cycle High-voltage applications (>1000V) Low frequency (<20kHz) - - - IGBT vs MOSFET IGBT vs MOSFET – – Summary Summary IGBT and MOSFET are voltage-controlled semiconductor devices primarily used to amplify weak signals. However, IGBTs combine the low on-resistance capability of a bipolar transistor with the voltage drive peculiarities of a MOSFET. IGBT is a three-terminal device that is a cross between the bipolar transistor and a MOSFET and hence, as mentioned above, extremely tolerant to electrostatic discharge and overloads. Need the Best Quality IGBT Power Modules or SIC MOSF Need the Best Quality IGBT Power Modules or SIC MOSFE ET? Partner with Millennium Semiconductors T? Partner with Millennium Semiconductors! ! Millennium Semiconductors is one of the most reputed, and also the top electronic component distributors in India. The company engages in the distribution of IGBT power modules and SIC MOSFETs as well. The company partners with a range of global manufacturers that include Sanken, Taiwan Semiconductors, UTC, ROHM, Infineon, and Silan for SiC MOSFETs and Infineon, IXYS, Sanken, ROHM, and Everlite for IGBT Motor Controller Modules. Additionally, the company’s nationwide network enables it to deliver electronic components to every corner of the country. For more details or to partner with Millennium, connect with +91 8308838961 or write an email to marcom@millenniumsemi.com.

More Related