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ATLAS Inner Detector Upgrade: R&D, Testing, and QA of Sensor, Electronics, and Module Production

Institute of Physics plans to participate in the upgrade of the ATLAS Inner Detector. They have experience in R&D, testing, and quality assurance for sensor, electronics, and module production. They also have access to irradiation facilities and specialized equipment for these purposes.

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ATLAS Inner Detector Upgrade: R&D, Testing, and QA of Sensor, Electronics, and Module Production

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  1. ATLAS Inner Detector upgradeplans for participation of Institute of Physics, Academy of Sciences Practical targets: Pixel Detector – sensors: R&D, testing and QA of the mass production. Experience from the construction of the present ATLAS Pixel Detector. Corresponding equipment (probe station, set of probes, setups for I-V an C-V measurements, microscopes, etc.) is available. Pixel Detector – electronics: R&D, testing, radiation hardness evaluation. Experience from the participation in R&D projects. Access to CZ irradiation facilities (reactor, Co60, etc.) Pixel Detector – modules: R&D, assembly and testing and QA of the mass production. Experience from the construction of the present ATLAS Pixel Detector. SCT– sensors: R&D, testing and QA of the mass production. Experience from the construction of the present SCT. SCT– modules: assembly - cooperation with CZ technology providers (e.g. Argotech – wire bonding), if such decision will be taken. Cooling SCT and Pixel Detector: R&D, construction and commissioning. Experience from the construction of the present SCT and Pixel detector. Václav Vrba, Institute of Physics

  2. Institute of Physics forATLAS Upgrade ITk Evaluation of the electrical characteristicsof large area n-on-psilicon sensors Electrical characteristics of ATLAS07 large area sensors fabricated by Hamamatsu Fotonics were studied and qualification tests were performed at Prague SCT lab in 2009. Measurements: Bias Voltage scans and Single strip scans with automatic probe station • Surface Parameters: Interstrip Resistance Interstrip Capacitance • AC Coupling Capacitance • IV and CV characteristics • Polysilicon Bias Resistance • Leakage Current to a strip Inter strip Capacitance -bias voltage scan • -bias voltage scan • – strip scan J. Bohm, M. Mikestikova, A. Affolder, P.P. Allport, … Z. Dolezal, P.Kodyš, et al. , NIM A636 (2011) S104-S110 Václav Vrba, Institute of Physics

  3. Laboratory Equipment- silicon lab in IP ASCR Prague Automatic probe-station KarlSuss PA200 • PA200 Manual probe-station with cooled chuck (-10°C) Nitrogen flow in probe-station, humidity < 5% Vacuum system with automatic control for fixing micromanipulators and sensors on chuck • chuck Peltier module for cooling the chuck Václav Vrba, Institute of Physics

  4. Institute of Physics forATLAS Upgrade ITk Research and development of Current Source for serial poweringof staves Jan Šťastný is working on design and manufacture of current source power supply for development of ITk staves. Inner Layout General View The units are in use at • RAL (SP stave) • Liverpool (SP module) • CERN B180 (SP module) They are reliable and work very well. Václav Vrba, Institute of Physics

  5. Conclusions The group orients on upgrade targets: • With which has practical experience from the ATLAS construction; • Which are new challenges even for all ATLAS (e.g. 65 nm technology for the readout electronics). The group has adequate manpower, experience and equipment to cover designated tasks. Václav Vrba, Institute of Physics

  6. Institute of Physics forATLAS Upgrade ITk Characterisation of radiation damages of strip sensors • Characteristics of irradiated sensors are studied using miniature samples 1cm2: • Barrel mini sensors(ATLAS07, ATLAS12A) : with variations of punch through protection (PTP) structures of AC coupling insulator and with variation in ion concentrations of P-stop and P-stop +P-stop spray separation • Endcap mini sensors(ATLAS12A) : with stereo strips or “skewed” layout 2 different pitches 2 types of stray strips ganging(AC and DC) 2 different types of PTP structures • Irradiation of mini sensors: neutrons from reactors in Řež(Prague) and Ljubljana protons from CERN (23GeV/c), Birmingham and Karlsruhe cyclotrons gamma BNL Václav Vrba, Institute of Physics

  7. Institute of Physics forATLAS Upgrade ITk Characterisation of radiation damages of strip sensors • Measurements: • IV and CV characteristics • Surface Parameters: Interstrip Resistance Interstrip Capacitance • PTP • AC Coupling Capacitance • Polysilicon Bias Resistance • [M. Mikestikova, ATLAS Upgrade week, April 2014] Václav Vrba, Institute of Physics

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