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NanoFab Simulator Update

NanoFab Simulator Update. Nick Reeder, May 31, 2012. Update to Scales. Changed vertical and horizontal scales on display, and added menu option to make scales equal or not.

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NanoFab Simulator Update

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  1. NanoFabSimulator Update Nick Reeder, May 31, 2012

  2. Update to Scales • Changed vertical and horizontal scales on display, and added menu option to make scales equal or not. • Question: Vertical scale’s max value is 2 m, but most of our photoresists spin to coats thicker than 2 m. Should we eliminate all but the thinnest viscosities?

  3. Updates to Dialog Boxes • User now specifies: • Power, pressure, and time for Sputter. • Voltage, current, and time for Evaporate. • Pressure, temperature, and time for CVD. • Need look-up tables to interpolate deposition rates based on user-supplied parameters. (Currently rate = 0.1 m/sec for all of these processes.) • Question: • For each of the above, what limits should we impose on the values that the user can enter?

  4. Updates to Plasma Etch Code • User now specifies power and pressure (as well as time), and the code adjusts etch rate accordingly. • Questions: • What limits should we impose on the power and pressure values that the user can enter? • On next slide, do curves for etch-scale-factor versus pressure look right?

  5. Etch Scale Factor vs Pressure

  6. Related Questions • For spin coat, what are reasonable max/min values for rpm? • For implant, max/min values for dose and ion energy? • For bake, max/min values for temperature?

  7. New Code: Bake • Began coding Bake model based on • Need values of S0 and  for our photoresists.

  8. To-Do List • Fix spin-coat code so that resist does not adhere to underside of horizontal surfaces. • Implement look-up tables to compute deposition rates for evaporate, CVD, and sputter based on user-supplied parameters. • Fix oxidize, develop, polish dialog boxes to ask user for correct parameters, and write code to compute depth from these values. • Continue writing bake code; need values for S0 and . • In expose code, implement diffraction of UV in air and absorption within resist, with dependence on solvent content from bake code. • Fix etch code so that (for photoresist) etch rates depend on solvent content from bake code. • Write new code for • Lift-off • Clean • Profilometer • Write time-cost-quality code for all operations. • Write online help text. • Produce videos, photos, text for Tutorial tab.

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