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NanoFab Simulator Update

NanoFab Simulator Update. Nick Reeder, May 4, 2012. Updates to Thermal Oxidize Code. Oxidizes existing material instead of depositing a new layer on top. Assumptions: Si becomes SiO2. All metals are oxidized, and subsequently can’t be etched.

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NanoFab Simulator Update

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  1. NanoFabSimulator Update Nick Reeder, May 4, 2012

  2. Updates to Thermal Oxidize Code • Oxidizes existing material instead of depositing a new layer on top. • Assumptions: • Si becomes SiO2. • All metals are oxidized, and subsequently can’t be etched. • Other materials (Ge and all dielectrics) are unaffected by oxidation. • Question: • When we oxidze doped Si, is the SiO2 still doped, and should we keep track of doping?

  3. Updates to Expose Code • Photoresist on sidewalls is UV-exposed, as well as resist on top surfaces. • No UV-exposure takes place beneath regions of any non-photoresist material. • Problems: • Doesn’t correctly handle resist lying directly under other material and within the diffraction cone of a mask. • Profile of exposed region within resist is not correct. (Not modeling absorption.)

  4. New Code: Implant • Lets user dope silicon or germanium as n, n+, p, or p+. Can later re-dope to a different depth or doping level. • Assumption: • No doping takes place beneath regions of any material other than Si or Ge. • Question: • Does doping diffuse horizontally within the Si, or is horizontal extent the same as window’s?

  5. Other Known Problems • Spin coat: Resist adheres to underside of horizontal surfaces. • Sputter: Doesn’t model sputtering angle, and regions shaded by other structures are sputtered, but shouldn’t be.

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