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NanoFab Trainer Update

NanoFab Trainer Update. Nick Reeder, January 17, 2014. Updates to User Interface. Uploaded Andrew’s seventeen PDF-file chapters to the Tutorial page, and sent list of possible typos to Andrew. File menu now has distinct Save As… and Save options . Window’s title bar shows filename.

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NanoFab Trainer Update

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  1. NanoFabTrainer Update Nick Reeder, January 17, 2014

  2. Updates to User Interface • Uploaded Andrew’s seventeen PDF-file chapters to the Tutorial page, and sent list of possible typos to Andrew. • File menu now has distinct Save As… and Save options. • Window’s title bar shows filename. • Buttons in dialog boxes respond to key presses as well as mouse clicks. • Partially implemented Jamshid’s suggestion to make graphs more easily accessible.

  3. Updates to Wet Etch Code • Etched edges of masked SiO2 are now tapered instead of vertical.

  4. Updates to Spin Coat Code • Fixed problem of photoresist “spikes” reported in November by Jamshid’s student Chico.

  5. Updates to Sputter LUTs • Updated the sputter look-up tables to include the deposition rates (for Ag, Al, Al203, Cr, Cu, Ge, Ti, SiO2) that Andrew sent on March 6, 2013. • Still need sputter data for Au, Ni, Pt, W, Si3N4, Ta2O5, TiO2, Si. • In many cases, rejected some of the original numbers as outliers or because they were inconsistent with linear interpolation from other numbers. • See following slides.

  6. Sputter Rates: Ag

  7. Sputter Rates: Al

  8. Sputter Rates: Al2O3

  9. Sputter Rates: Cr

  10. Sputter Rates: Cu

  11. Sputter Rates: Ge

  12. Sputter Rates: Ti

  13. Sputter Rates: SiO2

  14. To-Do List • Implement look-up tables to compute deposition rates forCVDbased on user-supplied pressure & temperature. • Populate evaporation look-up tables with values. • Populate sputter look-up tables for Au, Ni, Pt, W, Si3N4, Ta2O5, TiO2, Si. • Fix expose,develop, polish code to compute depth from user-supplied values. • Continue writing bake code; need realistic values for S0 and . • In expose code, implement diffraction of UV in air and absorption within resist, with dependence on solvent content from bake code. • Fix etch code so that (for photoresist) etch rates depend on solvent content from bake code. • Fix spin-coat code so that resist does not adhere to underside of horizontal surfaces. • Write new code for • Lift-off • Clean • Profilometer • Write time-cost-quality code for all operations. • Write online help text. • Produce videos for Videos tab.

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