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NanoFab Trainer Update

NanoFab Trainer Update. Nick Reeder, January 18, 2013. Update to Wet Etch Code. Wet etch rates are now interpolated from look-up tables, with rates increasing as bath temperature increases.

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NanoFab Trainer Update

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  1. NanoFabTrainer Update Nick Reeder, January 18, 2013

  2. Update to Wet Etch Code • Wet etch rates are now interpolated from look-up tables, with rates increasing as bath temperature increases. • Question: I arbitrarily set each etch rate at 50C to be double the rate at 20C. Is that a reasonable first approximation?

  3. Update to Dry Etch Code • Dry etch rates are now interpolated from look-up tables, with rates dependent on power and pressure. • Currently, in the lookup tables: • Rates increase linearly with power. • Rate-versus-pressure curves have profile discussed at our May 17, 2012 meeting:

  4. Update to Evaporate Code • Deposition rates for evaporation are now interpolated from look-up tables, with rates dependent on voltage and current. • Currently, the lookup tables for all evaporable materials hold the same data points, which are correct for Cr:

  5. Update to Sputter Code • Deposition rates for sputtering are now interpolated from look-up tables, with rates dependent on pressure and power. • Currently, the lookup tables for all sputterable materials hold the same data points, which are correct for Al:

  6. Menu Updates • Added new menu options to let user view (but not edit) spin speed curves, etch-rate lookup tables, and deposition-rate lookup tables. • Can extend this code to let the user edit the values too.

  7. Other Updates • Based on feedback from Summer Institute demo: • Rewrote Define Mask code for smoother operation of sliders. • Added acetone as a wet etchant.

  8. To-Do List • Implement look-up tables to compute deposition rates forCVDbased on user-supplied pressure & temperature. • Populate evaporation and sputter look-up tables with values. • Fix expose,develop, oxidize, polish code to compute depth from user-supplied values. • Continue writing bake code; need realistic values for S0 and . • In expose code, implement diffraction of UV in air and absorption within resist, with dependence on solvent content from bake code. • Fix etch code so that (for photoresist) etch rates depend on solvent content from bake code. • Fix spin-coat code so that resist does not adhere to underside of horizontal surfaces. • Write new code for • Lift-off • Clean • Profilometer • Write time-cost-quality code for all operations. • Write online help text. • Produce videos, photos, text for Tutorial tab.

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