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MuTr Chamber properties. K.Shoji Kyoto Univ. Measurement of MuTr raw signal. Use oscilloscope & LabView Read 1 strip HV 1850V Gas mixture Ar:CO 2 :CF 4 =50%:30%:20%. Total resistance 10kohm. Typical Pulse Shape. 3000 samples. Fit to these region. Ground Level Noise Subtract.
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MuTr Chamber properties K.Shoji Kyoto Univ.
Measurement of MuTr raw signal Use oscilloscope & LabView Read 1 strip HV 1850V Gas mixture Ar:CO2:CF4=50%:30%:20% Total resistance 10kohm
3000 samples Fit to these region Ground Level Noise Subtract Event-by-event ground level noise subtract Use linear function y=gradient*x+intercept
Detector Capacitance C Total Resistance R=9800ohm ~10Kohm Exp(-t/CR) Fit Error <300nsec CR~2.8usec ⇒ C~300pF (?) Decay time
Pulse Height Charge charge Pulse height Pulse Height and Charge distribution Distribution of 1 Strip Typical Charge is 200fC But I used narrow scintillator for trigger, These distribution has dependence of place
Correlation of Pulse Height & Charge There is clear correlation. But little bit rise where pulse height is low Because of the Noise?
Simple Model Cross mark is Profile of pulseheight&charge Red is Model Line
ASD Chip for MuTr LL1 Trigger 4 Channels for 1 Chip Input Impedance 370ohm Preamp Integration Time 80nsec Preamp gain 0.8mV/fC ENC 2000electrons for 300pF ⇒Analog output Main amp gain 7 Comparator with LVDS output Threshold voltage : common for all 4 channels ⇒Digital output
Expected Response of ASD Chip Input Impedance 370ohm Preamp Integration Time 80nsec Preamp gain 0.8mV/fC C~300pF ⇒ CR~110nsec Analog output Rise time : few~10nsec
Linearity of ASD Chip 1Kohm load Linearity of Analog output is wrong where charge>500fC
From now… • Correlation with neighbor strips • Try to Change HV or Gas mixture • Time Response Leading edge fluctuation from ion drift time<100nsec • ENC 2000electrons for 300pF ~0.3fC Requirement is less than 1% • Can we get 100um resolution with ASD Chip?